This book provides readers with a detailed reference regarding two of the most important long-term reliability and aging effects on nanometer integrated systems, electromigrations (EM) for interconnect and biased temperature instability (BTI) for CMOS devices. The authors discuss in detail recent developments in the modeling, analysis and optimization of the reliability effects from EM and BTI induced failures at the circuit, architecture and system levels of abstraction. Readers will benefit from a focus on topics such as recently developed, physics-based EM modeling, EM modeling for multi-segment wires, new EM-aware power grid analysis, and system level EM-induced reliability optimization and management techniques. Reviews classic Electromigration (EM) models, as well as existing EM failure models and discusses the limitations of those models; Introduces a dynamic EM model to address transient stress evolution, in which wires are stressed under time-varying current flows, and the EM recovery effects. Also includes new, parameterized equivalent DC current based EM models to address the recovery and transient effects; Presents a cross-layer approach to transistor aging modeling, analysis and mitigation, spanning multiple abstraction levels; Equips readers for EM-induced dynamic reliability management and energy or lifetime optimization techniques, for many-core dark silicon microprocessors, embedded systems, lower power many-core processors and datacenters.
This book systematically presents adaptive multichannel signal detection in three types of non-ideal environments, including sample-starved scenarios, signal mismatch scenarios, and noise plus subspace interference environments. The authors provide definitions of key concepts, detailed derivations of adaptive multichannel signal detectors, and specific examples for each non-ideal environment. In addition, the possible future trend of adaptive detection methods is discussed, as well as two further research points – namely, the adaptive detection algorithms based on information geometry, and the hybrid approaches that combine adaptive detection algorithms with machine learning algorithms. The book will be of interest to researchers, advanced undergraduates, and graduate students in sonar, radar signal processing, and communications engineering.
This open access book addresses the current technical problems of low efficiency of emergency site information collection, lack of flexibility of emergency information interaction, lack of fusion analysis technology and disaster loss prediction model, and low intelligence of emergency auxiliary decision making. The content contains research on multiple information collection technology of power grid disaster loss, fusion analysis and prediction technology of power grid disaster loss information, and real-time information interaction technology between emergency site and command center in this work. This book illustrates the process of developing a prototype system for grid disaster perception and emergency command, which realizes the functions of grid disaster perception and emergency auxiliary decision-making and visualization command. The prototype intelligent perception and emergency command system for power grid disasters has been piloted in several units. It provided support for disaster loss prediction, disaster damage perception, and emergency command auxiliary decision-making in the earthquake in Sichuan, China, as well as the heavy rainfall in Zhejiang, China and Typhoon No. 9 "Lupi" that registered in Fujian, China, which significantly improved the emergency disposal Work efficiency.
This book provides readers with a detailed reference regarding two of the most important long-term reliability and aging effects on nanometer integrated systems, electromigrations (EM) for interconnect and biased temperature instability (BTI) for CMOS devices. The authors discuss in detail recent developments in the modeling, analysis and optimization of the reliability effects from EM and BTI induced failures at the circuit, architecture and system levels of abstraction. Readers will benefit from a focus on topics such as recently developed, physics-based EM modeling, EM modeling for multi-segment wires, new EM-aware power grid analysis, and system level EM-induced reliability optimization and management techniques. Reviews classic Electromigration (EM) models, as well as existing EM failure models and discusses the limitations of those models; Introduces a dynamic EM model to address transient stress evolution, in which wires are stressed under time-varying current flows, and the EM recovery effects. Also includes new, parameterized equivalent DC current based EM models to address the recovery and transient effects; Presents a cross-layer approach to transistor aging modeling, analysis and mitigation, spanning multiple abstraction levels; Equips readers for EM-induced dynamic reliability management and energy or lifetime optimization techniques, for many-core dark silicon microprocessors, embedded systems, lower power many-core processors and datacenters.
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