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Semiconductor Process Reliability in Practice

By: Zhenghao Gan,Waisum Wong,Juin Liou

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Semiconductor Process Reliability in Practice

By: Zhenghao Gan,Waisum Wong,Juin Liou

Proven processes for ensuring semiconductor device reliability Co-written by experts in the field, Semiconductor Process Reliability in Practice contains detailed descriptions and analyses of reliability and qualification for semiconductor device manufacturing and discusses the underlying physics and theory. The book covers initial specification definition, test structure design, analysis of test structure data, and final qualification of the process. Real-world examples of test structure designs to qualify front-end-of-line devices and back-end-of-line interconnects are provided in this practical, comprehensive guide. Coverage includes: Basic device physics Process flow for MOS manufacturing Measurements useful for device reliability characterization Hot carrier injection Gate-oxide integrity (GOI) and time-dependent dielectric breakdown (TDDB) Negative bias temperature instability Plasma-induced damage Electrostatic discharge protection of integrated circuits Electromigration Stress migration Intermetal dielectric breakdown

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Page Count

624

Publisher

McGraw Hill Professional

Published Date

ISBN 10

007175427X

ISBN 13

9780071754279

Semiconductor Process Reliability in Practice

By: Zhenghao Gan,Waisum Wong,Juin Liou

Write a review Read reviews Take a Quiz Solve Book Puzzle

Semiconductor Process Reliability in Practice

By: Zhenghao Gan,Waisum Wong,Juin Liou

Proven processes for ensuring semiconductor device reliability Co-written by experts in the field, Semiconductor Process Reliability in Practice contains detailed descriptions and analyses of reliability and qualification for semiconductor device manufacturing and discusses the underlying physics and theory. The book covers initial specification definition, test structure design, analysis of test structure data, and final qualification of the process. Real-world examples of test structure designs to qualify front-end-of-line devices and back-end-of-line interconnects are provided in this practical, comprehensive guide. Coverage includes: Basic device physics Process flow for MOS manufacturing Measurements useful for device reliability characterization Hot carrier injection Gate-oxide integrity (GOI) and time-dependent dielectric breakdown (TDDB) Negative bias temperature instability Plasma-induced damage Electrostatic discharge protection of integrated circuits Electromigration Stress migration Intermetal dielectric breakdown

Average ratings

N/A

5

0%

4

0%

3

0%

2

0%

1

0%

Solve jigsaw puzzle

Age

Page Count

624

Publisher

McGraw Hill Professional

Published Date

ISBN 10

007175427X

ISBN 13

9780071754279