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Heteroepitaxy of Semiconductors

Theory, Growth, and Characterization, Second Edition

By: John E. Ayers,Tedi Kujofsa,Paul Rago,Johanna Raphael

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Heteroepitaxy of Semiconductors

Theory, Growth, and Characterization, Second Edition

By: John E. Ayers,Tedi Kujofsa,Paul Rago,Johanna Raphael

In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.

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Page Count

660

Publisher

CRC Press

Published Date

ISBN 10

1482254360

ISBN 13

9781482254365

Heteroepitaxy of Semiconductors

Theory, Growth, and Characterization, Second Edition

By: John E. Ayers,Tedi Kujofsa,Paul Rago,Johanna Raphael

Write a review Read reviews Take a Quiz Solve Book Puzzle

Heteroepitaxy of Semiconductors

Theory, Growth, and Characterization, Second Edition

By: John E. Ayers,Tedi Kujofsa,Paul Rago,Johanna Raphael

In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.

Average ratings

N/A

5

0%

4

0%

3

0%

2

0%

1

0%

Solve jigsaw puzzle

Age

Page Count

660

Publisher

CRC Press

Published Date

ISBN 10

1482254360

ISBN 13

9781482254365