This volume addresses the broad formal aspects and applications of the quantum theory of scattering in atomic and nuclear collisions. An encyclopedic source of pioneering work, it serves as a text for students and a reference for professionals in the fields of chemistry, physics, and astrophysics. The self-contained treatment begins with the general theory of scattering of a particle by a central field. Subsequent chapters explore particle scattering by a non-central field, collisions between composite particles, the time-dependent theory of scattering, and nuclear reactions. An examination of dispersion relations concludes the text. Numerous graphs, tables, and footnotes illuminate each chapter, in addition to helpful appendixes and bibliographies.
This volume addresses the broad formal aspects and applications of the quantum theory of scattering in atomic and nuclear collisions. An encyclopedic source of pioneering work, it serves as a text for students and a reference for professionals in the fields of chemistry, physics, and astrophysics. The self-contained treatment begins with the general theory of scattering of a particle by a central field. Subsequent chapters explore particle scattering by a non-central field, collisions between composite particles, the time-dependent theory of scattering, and nuclear reactions. An examination of dispersion relations concludes the text. Numerous graphs, tables, and footnotes illuminate each chapter, in addition to helpful appendixes and bibliographies.
Materials of micro-/nanometer dimensions have aroused remarkable interest, motivated by the diverse utility of unconventional mechanical and electronic properties distinguished from the bulk counterpart and various industrial applications such as electronic/optic devices and MEMS/NEMS. The size of their elements is now, ultimately, approaching nano
Gate Dielectrics and MOS ULSIs provides necessary and sufficient information for those who wish to know well and go beyond the conventional SiO2 gate dielectric. The topics particularly focus on dielectric films satisfying the superior quality needed for gate dielectrics even in large-scale integration. And since the quality requirements are rather different between device applications, they are selected in an applicatipn-oriented manner, e.g., conventional SiO2 used in CMOS logic circuits, nitrided oxides, which recently became indispensable for flash memories, and composite ONO and ferroelectric films for passive capacitors used in DRAM applications. The book also covers issues common to all gate dielectrics, such as MOSFET physics, evaluation, scaling, and device application/integration for successful development. The information is as up to date as possible, especially for nanometer-range ultrathin gate-dielectric films indispensible in submicrometer ULSIs. The text together with abundant illustrations will take even the inexperienced reader up to the present high state of the art. It is the first book presenting nitrided gate oxides in detail.
Intracellular Calcium-Dependent Proteolysis explains what is now known about calpains, which are intracellular, non-lysosomal enzymes involved in intracellular protein catabolism. The book provides a comprehensive overview of topics ranging from the molecular biology of the calpains and their specific inhibitor protein (calpastatin) to physiologic and pathologic consequences of the presence of this proteolytic system in many model cells and tissues. Several theoretical functions of the calpains are discussed, including their potential roles in muscle protein turnover, platelet activation, membrane fusion, and synaptic plasticity. Intracellular Calcium-Dependent Proteolysis is a valuable source of information for researchers and students interested in the regulation of intracellular protein catabolism and the general effects of Ca2+ on cell function.
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