Subhananda Chakrabarti's Books

Optimisation of ZnO Thin Films

Implants, Properties, and Device Fabrication

By: Saurabh Nagar,Subhananda Chakrabarti

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Optimisation of ZnO Thin Films

Implants, Properties, and Device Fabrication

By: Saurabh Nagar,Subhananda Chakrabarti

This monograph describes the different implantation mechanisms which can be used to achieve strong, reliable and stable p-type ZnO thin films. The results will prove useful in the field of optoelectronics in the UV region. This book will prove useful to research scholars and professionals working on doping and implantation of ZnO thin films and subsequently fabricating optoelectronic devices. The first chapter of the monograph emphasises the importance of ZnO in the field of optoelectronics for ultraviolet (UV) region and also discusses the material, electronic and optical properties of ZnO. The book then goes on to discuss the optimization of pulsed laser deposited (PLD) ZnO thin films in order to make successful p-type films. This can enable achievement of high optical output required for high-efficiency devices. The book also discusses a hydrogen implantation study on the optimized films to confirm whether the implantation leads to improvement in the optimized results.

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Page Count

101

Publisher

Springer

Published Date

ISBN 10

9811008094

ISBN 13

9789811008092

Structural, Optical and Spectral Behaviour of InAs-based Quantum Dot Heterostructures

Applications for High-performance Infrared Photodetectors

By: Saumya Sengupta,Subhananda Chakrabarti

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Structural, Optical and Spectral Behaviour of InAs-based Quantum Dot Heterostructures

Applications for High-performance Infrared Photodetectors

By: Saumya Sengupta,Subhananda Chakrabarti

This book explores the effects of growth pause or ripening time on the properties of quantum dots(QDs). It covers the effects of post-growth rapid thermal annealing (RTA) treatment on properties of single layer QDs. The effects of post-growth rapid thermal annealing (RTA) treatment on properties of single layer QDs are discussed. The book offers insight into InAs/GaAs bilayer QD heterostructures with very thin spacer layers and discusses minimum spacer thickness required to grow electronically coupled bilayer QD heterostructures. These techniques make bilayer QD heterostructures a better choice over the single layer and uncoupled multilayer QD heterostructure. Finally, the book discusses sub-monolayer (SML) growth technique to grow QDs. This recent technique has been proven to improve the device performance significantly. The contents of this monograph will prove useful to researchers and professionals alike.

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Published Date

ISBN 10

9811057028

ISBN 13

9789811057021

Impact of Ion Implantation on Quantum Dot Heterostructures and Devices

By: Arjun Mandal,Subhananda Chakrabarti

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Impact of Ion Implantation on Quantum Dot Heterostructures and Devices

By: Arjun Mandal,Subhananda Chakrabarti

This book looks at the effects of ion implantation as an effective post-growth technique to improve the material properties, and ultimately, the device performance of In(Ga)As/GaAs quantum dot (QD) heterostructures. Over the past two decades, In(Ga)As/GaAs-based QD heterostructures have marked their superiority, particularly for application in lasers and photodetectors. Several in-situ and ex-situ techniques that improve material quality and device performance have already been reported. These techniques are necessary to maintain dot density and dot size uniformity in QD heterostructures and also to improve the material quality of heterostructures by removing defects from the system. While rapid thermal annealing, pulsed laser annealing and the hydrogen passivation technique have been popular as post-growth methods, ion implantation had not been explored largely as a post-growth method for improving the material properties of In(Ga)As/GaAs QD heterostructures. This work attempts to remedy this gap in the literature. The work also looks at introduction of a capping layer of quaternary alloy InAlGaAs over these In(Ga)As/GaAs QDs to achieve better QD characteristics. The contents of this volume will prove useful to researchers and professionals involved in the study of QDs and QD-based devices.

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Published Date

ISBN 10

9811043345

ISBN 13

9789811043345

Quaternary Capped In(Ga)As/GaAs Quantum Dot Infrared Photodetectors

From Materials to Devices

By: Sourav Adhikary,Subhananda Chakrabarti

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Quaternary Capped In(Ga)As/GaAs Quantum Dot Infrared Photodetectors

From Materials to Devices

By: Sourav Adhikary,Subhananda Chakrabarti

This book introduces some alternative methods for enhancing the performance of In(Ga)As/GaAs-based quantum dot infrared photodetectors (QDIPs). In(Ga)As/GaAs-based QDIPs and focal plane array (FPA) cameras have wide application in fields such as military and space science. The core of the study uses a combination of quaternary In0.21Al0.21Ga0.58As and GaAs spacer as a capping layer on In(Ga)As/GaAs quantum dots in the active region of the detector structure. For the purposes of optimization, three types of samples growths are considered with different capping thicknesses. The results presented include TEM, XRD and photoluminescence studies that compare combination barrier thickness and its effect on structural and optical properties. Compressive strain within the heterostructure, thermal stability in high temperature annealing, spectral response, shifts in PL peaks peak,and responsivity and detectivity are all considered. The results also present a narrow spectral width that was obtained by using InAs QDs which is very useful for third generation FPA camera application. The book details effect of post-growth rapid thermal annealing on device characteristics and methods to enhance responsivity and peak detectivity. The contents of this book will be useful to researchers and professionals alike.

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