Sitangshu Bhattacharya's Books

Effective Electron Mass in Low-Dimensional Semiconductors

By: Sitangshu Bhattacharya,Kamakhya Prasad Ghatak

Write a review Read reviews Take a Quiz Solve Book Puzzle

Effective Electron Mass in Low-Dimensional Semiconductors

By: Sitangshu Bhattacharya,Kamakhya Prasad Ghatak

This book deals with the Effective Electron Mass (EEM) in low dimensional semiconductors. The materials considered are quantum confined non-linear optical, III-V, II-VI, GaP, Ge, PtSb2, zero-gap, stressed, Bismuth, carbon nanotubes, GaSb, IV-VI, Te, II-V, Bi2Te3, Sb, III-V, II-VI, IV-VI semiconductors and quantized III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices. The presence of intense electric field and the light waves change the band structure of optoelectronic semiconductors in fundamental ways, which have also been incorporated in the study of the EEM in quantized structures of optoelectronic compounds that control the studies of the quantum effect devices under strong fields. The importance of measurement of band gap in optoelectronic materials under strong electric field and external photo excitation has also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the EEM and the EEM in heavily doped semiconductors and their nanostructures is discussed. This book contains 200 open research problems which form the integral part of the text and are useful for both Ph. D aspirants and researchers in the fields of solid-state sciences, materials science, nanoscience and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures. The book is written for post graduate students, researchers and engineers, professionals in the fields of solid state sciences, materials science, nanoscience and technology, nanostructured materials and condensed matter physics.

Average ratings

N/A

Write a review

Solve jigsaw puzzle

Age

Page Count

549

Publisher

Springer Science & Business Media

Published Date

ISBN 10

3642312470

ISBN 13

9783642312472

Einstein Relation in Compound Semiconductors and Their Nanostructures

By: Kamakhya Prasad Ghatak,Sitangshu Bhattacharya,Debashis De

Write a review Read reviews Take a Quiz Solve Book Puzzle

Einstein Relation in Compound Semiconductors and Their Nanostructures

By: Kamakhya Prasad Ghatak,Sitangshu Bhattacharya,Debashis De

Focusing only on the Einstein relation in compound semiconductors and their nanostructures, this book deals with open research problems from carbon nanotubes to quantum wire superlattices with different band structures, and other field assisted systems.

Average ratings

N/A

Write a review

Solve jigsaw puzzle

Age

Page Count

471

Publisher

Springer Science & Business Media

Published Date

ISBN 10

354079557X

ISBN 13

9783540795575

Fowler-Nordheim Field Emission

Effects in Semiconductor Nanostructures

By: Sitangshu Bhattacharya,Kamakhya Prasad Ghatak

Write a review Read reviews Take a Quiz Solve Book Puzzle

Fowler-Nordheim Field Emission

Effects in Semiconductor Nanostructures

By: Sitangshu Bhattacharya,Kamakhya Prasad Ghatak

This monograph solely presents the Fowler-Nordheim field emission (FNFE) from semiconductors and their nanostructures. The materials considered are quantum confined non-linear optical, III-V, II-VI, Ge, Te, carbon nanotubes, PtSb2, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V, Bi2Te3, III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices under magnetic quantization and quantum wires of the aforementioned superlattices. The FNFE in opto-electronic materials and their quantum confined counterparts is studied in the presence of light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The importance of band gap measurements in opto-electronic materials in the presence of external fields is discussed from this perspective. This monograph contains 200 open research problems which form the very core and are useful for Ph. D students and researchers. The book can also serve as a basis for a graduate course on field emission from solids.

Average ratings

N/A

Write a review

Solve jigsaw puzzle

Age

Page Count

353

Publisher

Springer Science & Business Media

Published Date

ISBN 10

3642204937

ISBN 13

9783642204937

Thermoelectric Power in Nanostructured Materials

Strong Magnetic Fields

By: Kamakhya Prasad Ghatak,Sitangshu Bhattacharya

Write a review Read reviews Take a Quiz Solve Book Puzzle

Thermoelectric Power in Nanostructured Materials

Strong Magnetic Fields

By: Kamakhya Prasad Ghatak,Sitangshu Bhattacharya

This is the first monograph which solely investigates the thermoelectric power in nanostrcutured materials under strong magnetic field (TPSM) in quantum confined nonlinear optical, III-V, II-VI, n-GaP, n-Ge, Te, Graphite, PtSb2, zerogap, II-V, Gallium Antimonide, stressed materials, Bismuth, IV-VI, lead germanium telluride, Zinc and Cadmium diphosphides, Bi2Te3, Antimony and carbon nanotubes, III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices under magnetic quantization, the quantum wires and dots of the aforementiond superlattices by formulating the approprate respective carrier energy spectra which in turn control the quantum processes in quantum effect devices. The TPSM in macro, quantum wire and quantum dot superlattices of optoelectronic materials in the presence of external photo-excitation have also been studied on the basis of newly formulated electron dispersion laws. This monograph contains 150 open research problems which form the very core and are useful for PhD students and researchers in the fields of materials science, solid-state sciences, computational and theoretical nanoscience and technology, nanostructured thermodynamics and condensed matter physics in general in addition to the graduate courses on modern thermoelectric materials in various academic departments of many institutes and universities.

Average ratings

N/A

Write a review

Solve jigsaw puzzle

Age

Page Count

411

Publisher

Springer Science & Business Media

Published Date

ISBN 10

3642105718

ISBN 13

9783642105715

Heavily-Doped 2D-Quantized Structures and the Einstein Relation

By: Kamakhya P. Ghatak,Sitangshu Bhattacharya

Write a review Read reviews Take a Quiz Solve Book Puzzle

Heavily-Doped 2D-Quantized Structures and the Einstein Relation

By: Kamakhya P. Ghatak,Sitangshu Bhattacharya

This book presents the Einstein Relation(ER) in two-dimensional (2-D) Heavily Doped (HD) Quantized Structures. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The ER in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestion for the experimental determination of HD 2D and 3D ERs and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nanodevices and strong external photo excitation (for measuring photon induced physical properties) are also discussed in this context. The influence of crossed electric and quantizing magnetic fields on the ER of the different 2D HD quantized structures (quantum wells, inversion and accumulation layers, quantum well HD superlattices and nipi structures) under different physical conditions is discussed in detail. This monograph contains 100 open research problems which form the integral part of the text and are useful for both Ph.D aspirants and researchers in the fields of condensed matter physics, solid-state sciences, materials science, nano-science and technology and allied fields.

Average ratings

N/A

Write a review

Solve jigsaw puzzle

Age

Page Count

381

Publisher

Springer

Published Date

ISBN 10

3319083805

ISBN 13

9783319083803

Debye Screening Length

Effects of Nanostructured Materials

By: Kamakhya Prasad Ghatak,Sitangshu Bhattacharya

Write a review Read reviews Take a Quiz Solve Book Puzzle

Debye Screening Length

Effects of Nanostructured Materials

By: Kamakhya Prasad Ghatak,Sitangshu Bhattacharya

This monograph solely investigates the Debye Screening Length (DSL) in semiconductors and their nano-structures. The materials considered are quantized structures of non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V and Bismuth Telluride respectively. The DSL in opto-electronic materials and their quantum confined counterparts is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestions for the experimental determination of 2D and 3D DSL and the importance of measurement of band gap in optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring photon induced physical properties) have also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the DSL and the DSL in heavily doped semiconductors and their nanostructures has been investigated. This monograph contains 150 open research problems which form the integral part of the text and are useful for both PhD students and researchers in the fields of solid-state sciences, materials science, nano-science and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures.

Average ratings

N/A

Write a review

Solve jigsaw puzzle

Age

Page Count

403

Publisher

Springer

Published Date

ISBN 10

3319013394

ISBN 13

9783319013398

Photoemission from Optoelectronic Materials and their Nanostructures

By: Kamakhya Prasad Ghatak,Sitangshu Bhattacharya,Debashis De

Write a review Read reviews Take a Quiz Solve Book Puzzle

Photoemission from Optoelectronic Materials and their Nanostructures

By: Kamakhya Prasad Ghatak,Sitangshu Bhattacharya,Debashis De

In recent years, with the advent of fine line lithographical methods, molecular beam epitaxy, organometallic vapour phase epitaxy and other experimental techniques, low dimensional structures having quantum confinement in one, two and three dimensions (such as ultrathin films, inversion layers, accumulation layers, quantum well superlattices, quantum well wires, quantum wires superlattices, magneto-size quantizations, and quantum dots) have attracted much attention not only for their potential in uncovering new phenomena in nanoscience and technology, but also for their interesting applications in the areas of quantum effect devices. In ultrathin films, the restriction of the motion of the carriers in the direction normal to the film leads to the quantum size effect and such systems find extensive applications in quantum well lasers, field effect transistors, high speed digital networks and also in other quantum effect devices. In quantum well wires, the carriers are quantized in two transverse directions and only one-dimensional motion of the carriers is allowed.

Average ratings

N/A