Single Crystal Growth of Semiconductors from Metallic Solutions covers the four principal growth techniques currently in use for the growth of semiconductor single crystals from metallic solutions. Providing an in-depth review of the state-of-the-art of each, both experimentally and by numerical simulations. The importance of a close interaction between the numerical and experimental aspects of the processes is also emphasized. Advances in the fields of electronics and opto-electronics are hampered by the limited number of substrate materials which can be readily produced by melt-growth techniques such as the Czochralski and Bridgman methods. This can be alleviated by the use of alternative growth techniques, and in particular, growth from metallic solutions. The principal techniques currently in use are: Liquid Phase Epitaxy; Liquid Phase Electroepitaxy; the Travelling Heater Method, and; Liquid Phase Diffusion. Single Crystal Growth of Semiconductors from Metallic Solutions will serve as a valuable reference tool for researchers, and graduate and senior undergraduate students in the field of crystal growth. It covers most of the models developed in recent years. The detailed development of basic and constitutive equations and the associated interface and boundary conditions given for each technique will be very valuable to researchers for the development of their new models.* Describes the fundamentals of crystal growth modelling* Providing a state-of-the art description of the mathematical and experimental growth processes * Allows reader to gain clear insight into the practical and mathematical aspects of the topic
Single Crystal Growth of Semiconductors from Metallic Solutions covers the four principal growth techniques currently in use for the growth of semiconductor single crystals from metallic solutions. Providing an in-depth review of the state-of-the-art of each, both experimentally and by numerical simulations. The importance of a close interaction between the numerical and experimental aspects of the processes is also emphasized. Advances in the fields of electronics and opto-electronics are hampered by the limited number of substrate materials which can be readily produced by melt-growth techniques such as the Czochralski and Bridgman methods. This can be alleviated by the use of alternative growth techniques, and in particular, growth from metallic solutions. The principal techniques currently in use are: Liquid Phase Epitaxy; Liquid Phase Electroepitaxy; the Travelling Heater Method, and; Liquid Phase Diffusion. Single Crystal Growth of Semiconductors from Metallic Solutions will serve as a valuable reference tool for researchers, and graduate and senior undergraduate students in the field of crystal growth. It covers most of the models developed in recent years. The detailed development of basic and constitutive equations and the associated interface and boundary conditions given for each technique will be very valuable to researchers for the development of their new models.* Describes the fundamentals of crystal growth modelling* Providing a state-of-the art description of the mathematical and experimental growth processes * Allows reader to gain clear insight into the practical and mathematical aspects of the topic
In crystal growth from the liquid phase, convective flows occurring in the melt or solution play a significant role in many aspects of the growth processes. This includes concentration distribution in the liquid phase, crystal composition, microstructures in the grown crystals, and the shape and evolution of the melting/growing interfaces. All these parameters affect the quality of grown crystals. To this end, convection in the liquid phase must be controlled. The main option to achieve this goal in crystal growth is the use of applied fields such as magnetic and electric fields, crucible rotation, and a microgravity environment. The use of microgravity fields was covered in one of the previous volumes of Research Signpost. The present volume mainly focuses on the melt and solution growth of semiconductors under the effects of applied electric and magnetic fields and crucible rotation. The book consists of two main groups of chapters. The first group is on the melt growth techniques of Czhochralski and Float-zone, and the second part focuses on the solution growth techniques of Liquid Phase Electroepitaxy, Liquid Phase Diffusion and the Travelling Heater Method. In each group, chapters are presented in the alphabetical order with respect to the first author. The contributed chapters cover recent developments in these techniques under applied fields such as applied magnetic and electric fields, crucible rotation and reduced gravity conditions. We hope that this review book will serve to researchers and graduate students in these fields as a valuable source in conducting their research. We would like to express our deepest appreciation to the contributors for their excellent contributions, and the time and effort put into these chapters. We would also like to thank the Transworld Research Network for providing this opportunity for us to disseminate our recent findings in this important field of research. Finally our thanks go to Sema Dost for her organizational help in the preparation of the volume.
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