This book pioneers the field of gain-cell embedded DRAM (GC-eDRAM) design for low-power VLSI systems-on-chip (SoCs). Novel GC-eDRAMs are specifically designed and optimized for a range of low-power VLSI SoCs, ranging from ultra-low power to power-aware high-performance applications. After a detailed review of prior-art GC-eDRAMs, an analytical retention time distribution model is introduced and validated by silicon measurements, which is key for low-power GC-eDRAM design. The book then investigates supply voltage scaling and near-threshold voltage (NTV) operation of a conventional gain cell (GC), before presenting novel GC circuit and assist techniques for NTV operation, including a 3-transistor full transmission-gate write port, reverse body biasing (RBB), and a replica technique for optimum refresh timing. Next, conventional GC bitcells are evaluated under aggressive technology and voltage scaling (down to the subthreshold domain), before novel bitcells for aggressively scaled CMOS nodes and soft-error tolerance as presented, including a 4-transistor GC with partial internal feedback and a 4-transistor GC with built-in redundancy.
A fascinating history of nationalistic policies in Europe in the mid-nineteenth century. Both Germany, France and Italy experienced huge nationalistic political reforms and they helped create the modern Europe we know today.
This 2005 book is a comparative history of the economic organisation of energy, telecommunications and transport in Europe in the nineteenth and twentieth centuries. It examines the role that private and public enterprise have played in the construction and operation of the railways, electricity, gas and water supply, tramways, coal, oil and natural gas industries, telegraph, telephone, computer networks and other modern telecommunications. The book begins with the arrival of the railways in the 1830s, charts the development of arms' length regulation, municipalisation and nationalisation, and ends on the eve of privatisation in the 1980s. Robert Millward argues that the role of ideology, especially in the form of debates about socialism and capitalism, has been exaggerated. Instead the driving forces in changes in economic organisation were economic and technological factors and the book traces their influence in shaping the pattern of regulation and ownership of these key sectors of modern economies.
This book pioneers the field of gain-cell embedded DRAM (GC-eDRAM) design for low-power VLSI systems-on-chip (SoCs). Novel GC-eDRAMs are specifically designed and optimized for a range of low-power VLSI SoCs, ranging from ultra-low power to power-aware high-performance applications. After a detailed review of prior-art GC-eDRAMs, an analytical retention time distribution model is introduced and validated by silicon measurements, which is key for low-power GC-eDRAM design. The book then investigates supply voltage scaling and near-threshold voltage (NTV) operation of a conventional gain cell (GC), before presenting novel GC circuit and assist techniques for NTV operation, including a 3-transistor full transmission-gate write port, reverse body biasing (RBB), and a replica technique for optimum refresh timing. Next, conventional GC bitcells are evaluated under aggressive technology and voltage scaling (down to the subthreshold domain), before novel bitcells for aggressively scaled CMOS nodes and soft-error tolerance as presented, including a 4-transistor GC with partial internal feedback and a 4-transistor GC with built-in redundancy.
This will help us customize your experience to showcase the most relevant content to your age group
Please select from below
Login
Not registered?
Sign up
Already registered?
Success – Your message will goes here
We'd love to hear from you!
Thank you for visiting our website. Would you like to provide feedback on how we could improve your experience?
This site does not use any third party cookies with one exception — it uses cookies from Google to deliver its services and to analyze traffic.Learn More.