This textbook was written because the authors failed to find a comprehensive text for a course on non-relativistic nuclear reactions. The book combines a thorough theoretical approach with applications to recent experimental results. The main formalisms used to describe nuclear reactions areexplained clearly and coherently, and the reader is led from basic laws to the final formulae used to calculate measurable quantities. Topics treated include quantal and semi-classical potential scattering, the formal theory of nuclear reactions, including the theory of the optical model, anddirect reactions and coupled-channel systems. Also included are compound nucleus reactions and fusion, dissipation fluctuations in deep-inelastic collisions, fusion, and heavy-ion induced fission. The book will be welcomed by lecturers, graduate students, and researchers in nuclear and atomicphysics.
The book presents a comprehensive survey of the thermoballistic approach to charge carrier transport in semiconductors. This semi-classical approach, which the authors have developed over the past decade, bridges the gap between the opposing drift-diffusion and ballistic models of carrier transport. While incorporating basic features of the latter two models, the physical concept underlying the thermoballistic approach constitutes a novel, unifying scheme. It is based on the introduction of "ballistic configurations" arising from a random partitioning of the length of a semiconducting sample into ballistic transport intervals. Stochastic averaging of the ballistic carrier currents over the ballistic configurations results in a position-dependent thermoballistic current, which is the key element of the thermoballistic concept and forms the point of departure for the calculation of all relevant transport properties. In the book, the thermoballistic concept and its implementation are developed in great detail and specific examples of interest to current research in semiconductor physics and spintronics are worked out.
The book presents a comprehensive survey of the thermoballistic approach to charge carrier transport in semiconductors. This semi-classical approach, which the authors have developed over the past decade, bridges the gap between the opposing drift-diffusion and ballistic models of carrier transport. While incorporating basic features of the latter two models, the physical concept underlying the thermoballistic approach constitutes a novel, unifying scheme. It is based on the introduction of "ballistic configurations" arising from a random partitioning of the length of a semiconducting sample into ballistic transport intervals. Stochastic averaging of the ballistic carrier currents over the ballistic configurations results in a position-dependent thermoballistic current, which is the key element of the thermoballistic concept and forms the point of departure for the calculation of all relevant transport properties. In the book, the thermoballistic concept and its implementation are developed in great detail and specific examples of interest to current research in semiconductor physics and spintronics are worked out.
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