This book presents topics of science and engineering which occur in nature or are part of daily life. It describes phenomena which are modelled by partial differential equations, relating to physical variables like mass, velocity and energy, etc. to their spatial and temporal variations. The author has chosen topics representing his career-long interests, including the flow of fluids and gases, granular flows, biological processes like pattern formation on animal skins, kinetics of rarified gases and semiconductor devices. Each topic is presented in its scientific or engineering context, followed by an introduction of applicable mathematical models in the form of partial differential equations.
In recent years the mathematical modeling of charge transport in semi conductors has become a thriving area in applied mathematics. The drift diffusion equations, which constitute the most popular model for the simula tion of the electrical behavior of semiconductor devices, are by now mathe matically quite well understood. As a consequence numerical methods have been developed, which allow for reasonably efficient computer simulations in many cases of practical relevance. Nowadays, research on the drift diffu sion model is of a highly specialized nature. It concentrates on the explora tion of possibly more efficient discretization methods (e.g. mixed finite elements, streamline diffusion), on the improvement of the performance of nonlinear iteration and linear equation solvers, and on three dimensional applications. The ongoing miniaturization of semiconductor devices has prompted a shift of the focus of the modeling research lately, since the drift diffusion model does not account well for charge transport in ultra integrated devices. Extensions of the drift diffusion model (so called hydrodynamic models) are under investigation for the modeling of hot electron effects in submicron MOS-transistors, and supercomputer technology has made it possible to employ kinetic models (semiclassical Boltzmann-Poisson and Wigner Poisson equations) for the simulation of certain highly integrated devices.
This book presents topics of science and engineering which occur in nature or are part of daily life. It describes phenomena which are modelled by partial differential equations, relating to physical variables like mass, velocity and energy, etc. to their spatial and temporal variations. The author has chosen topics representing his career-long interests, including the flow of fluids and gases, granular flows, biological processes like pattern formation on animal skins, kinetics of rarified gases and semiconductor devices. Each topic is presented in its scientific or engineering context, followed by an introduction of applicable mathematical models in the form of partial differential equations.
In recent years the mathematical modeling of charge transport in semi conductors has become a thriving area in applied mathematics. The drift diffusion equations, which constitute the most popular model for the simula tion of the electrical behavior of semiconductor devices, are by now mathe matically quite well understood. As a consequence numerical methods have been developed, which allow for reasonably efficient computer simulations in many cases of practical relevance. Nowadays, research on the drift diffu sion model is of a highly specialized nature. It concentrates on the explora tion of possibly more efficient discretization methods (e.g. mixed finite elements, streamline diffusion), on the improvement of the performance of nonlinear iteration and linear equation solvers, and on three dimensional applications. The ongoing miniaturization of semiconductor devices has prompted a shift of the focus of the modeling research lately, since the drift diffusion model does not account well for charge transport in ultra integrated devices. Extensions of the drift diffusion model (so called hydrodynamic models) are under investigation for the modeling of hot electron effects in submicron MOS-transistors, and supercomputer technology has made it possible to employ kinetic models (semiclassical Boltzmann-Poisson and Wigner Poisson equations) for the simulation of certain highly integrated devices.
Das Multi-Ionen Transport und Reaktionsmodell wird fur die Simulation von elektrochemischen Prozessen eingesetzt. Das durch das Modell gegebene System partieller Differentialgleichungen (PDE) wird mit Hilfe einer gemischten Residuen-Distribution und Finiten Elemente Methode diskretisiert und mit dem Newton Verfahren linearisiert. Dabei entstehen eine Reihe linearer Gleichungssyteme.Die Dissertation beschreibt ein physikalisch orientiertes algebraisches Mehrgitterverfahren, welches zur effizienten und robusten Losung dieser linearen Gleichungssyteme eingesetzt werden kann. Insbesondere wird auf die Reihenfolge der Variablen und deren Wirkung auf das Glattungsverhalten eingegangen. Bei der Konstruktion der Grobgitterkorrektur werden Aspekte wie eine verletzte Peclet Bedingung und die Nichtlinearitat des PDE Systems beachtet.
Thank you for visiting our website. Would you like to provide feedback on how we could improve your experience?
This site does not use any third party cookies with one exception — it uses cookies from Google to deliver its services and to analyze traffic.Learn More.