This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.
Despite its continuing popularity, the so-called standard circuit model of compound semiconductor field-effect transistors (FETs) and high electron mobility transistors (HEMTs) is shown to have a limitation for nonlinear analysis and design: it is valid only in the static limit. When the voltages and currents are time-varying, as they must be for these devices to have any practical use, the model progressively fails for higher specification circuits. This book shows how to reform the standard model to render it fully compliant with the way FETs and HEMTs actually function, thus rendering it valid dynamically. Proof-of-principle is demonstrated for several practical circuits, including a frequency doubler and amplifiers with demanding performance criteria. Methods for extracting both the reformulated model and the standard model are described, including a scheme for re-constructing from S-parameters the bias-dependent dynamic (or RF) I(V) characteristics along which devices work in real-world applications, and as needed for the design of nonlinear circuits using harmonic-balance and time-domain simulators. The book includes a historical review of how variations on the standard model theme evolved, leading up to one of the most widely used—the Angelov (or Chalmers) model.
The Arctic is one of the world’s regions most affected by cultural, socio-economic, environmental and climatic changes. This book offers key insights into the history, current state of knowledge and the future of sustainability, and sustainable development, research in the Arctic. Written by an international, interdisciplinary team of experts, i
Much progress has been made to understand the intricacies of the brain's workings. Some have claimed, and many assumed, that these findings have challenged faith in God to the point of destruction. Are we not mere neural machines? Are religious experiences not just 'in the mind', the products of abnormal 'brain events'? Is faith not just a side effect of evolution? Not so, according to neuroscientist Peter Clarke, after a lifetime's study of the brain. In this comprehensive book, the current state of neuroscientific evidence is weighed up alongside ideas of what it means to be human, the idea of the soul, near-death experiences, and questions of free will and responsibility. He engages with the leading thinkers in these areas, including Francis Crick, Richard Dawkins, Daniel Dennett, Sam Harris, and Daniel Wegner.
This updated, full-color 4th edition features a greatly expanded surgical focus for a practical guide to corneal surgery. The expert guidance of internationally renowned editors provides you with authoritative and current coverage that takes you from an in-depth exploration corneal function as related to corneal surgery through to the correction of refractive errors. New chapters ensure that you stay up-to-date on the latest developments in the field. This easy-to-use, state-of-the-art resource has been reorganized to focus strictly on surgery to provide you with more coverage of recent surgical advances. Presents boxes of clinical pearls throughout the text for accessible expert guidance. Features the latest surgical techniques and postoperative management of penetrating and lamellar keratoplasty —to provide you with details on hot topics in the field. Gives you fresh insights with new sections and a broader perspective from a new team of editors. Makes use of full color throughout the text, as well as step-by-step surgical line illustrations and full-color photographs so you gain a more accurate visual understanding of corneal surgery. Emphasizes refractive surgery considerations, including technique, with supporting medical illustrations and video presentations.
This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.
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