This book focuses on the development of design techniques and methodologies for 60-GHz and E-band power amplifiers and transmitters at device, circuit and layout levels. The authors show the recent development of millimeter-wave design techniques, especially of power amplifiers and transmitters, and presents novel design concepts, such as “power transistor layout” and “4-way parallel-series power combiner”, that can enhance the output power and efficiency of power amplifiers in a compact silicon area. Five state-of-the-art 60-GHz and E-band designs with measured results are demonstrated to prove the effectiveness of the design concepts and hands-on methodologies presented. This book serves as a valuable reference for circuit designers to develop millimeter-wave building blocks for future 5G applications.
This book describes the design of fully digital multistandard transmitter front-ends which can directly drive one or more switching power amplifiers, thus eliminating all other analog components. After reviewing different architectures, the authors focus on polar architectures using pulse width modulation (PWM), which are entirely based on unclocked delay lines and other continuous-time digital hardware. As a result, readers are enabled to shift accuracy concerns from the voltage domain to the time domain, to coincide with submicron CMOS technology scaling. The authors present different architectural options and compare them, based on their effect on the signal and spectrum quality. Next, a high-level theoretical analysis of two different PWM-based architectures – baseband PWM and RF PWM – is made. On the circuit level, traditional digital components and design techniques are revisited from the point of view of continuous-time digital circuits. Important design criteria are identified and different solutions are presented, along with their advantages and disadvantages. Finally, two chips designed in nanometer CMOS technologies are described, along with measurement results for validation.
This book discusses design techniques, layout details and measurements of several key analog building blocks that currently limit the performance of 5G and E-Band transceivers implemented in deep-scaled CMOS. The authors present recent developments in low-noise quadrature VCOs and tunable inductor-less frequency dividers. Moreover, the design of low-loss broadband transformer-based filters that realize inter-stage matching, power division/combining and impedance transformation is discussed in great detail. The design and measurements of a low-noise amplifier, a downconverter and a highly-linear power amplifier that leverage the proposed techniques are shown. All the prototypes were realized in advanced nanometer scaled CMOS technologies without RF thick to metal option.
This book focuses on the development of circuit and system design techniques for millimeter wave wireless communication systems above 90GHz and fabricated in nanometer scale CMOS technologies. The authors demonstrate a hands-on methodology that was applied to design six different chips, in order to overcome a variety of design challenges. Behavior of both actives and passives, and how to design them to achieve high performance is discussed in detail. This book serves as a valuable reference for millimeter wave designers, working at both the transistor level and system level.
This book tackles both high efficiency and high linearity power amplifier (PA) design in low-voltage CMOS. With its emphasis on theory, design and implementation, the book offers a guide for those actively involved in the design of fully integrated CMOS wireless transceivers. Offering mathematical background, as well as intuitive insight, the book is essential reading for RF design engineers and researchers and is also suitable as a text book.
This book tackles the challenges of designing mm-wave circuits in 16nm FinFET, from the elementary transistor level to a measured D-band transmitter. The design of crucial building blocks such as oscillators and power amplifiers are covered through theoretical limitations, design methodology and measurement. Offers first book on design of mm-wave circuits above 100GHz in an advanced 16nm FinFET digital technology; Covers fundamentals of transistor layout, circuit implementation and measurements; Provides single-source reference to information otherwise only available in disparate literature.
This book focuses on broadband power amplifier design for wireless communication. Nonlinear model embedding is described as a powerful tool for designing broadband continuous Class-J and continuous class F power amplifiers. The authors also discuss various techniques for extending bandwidth of load modulation based power amplifiers, such as Doherty power amplifier and Chireix outphasing amplifiers. The book also covers recent trends on digital as well as analog techniques to enhance bandwidth and linearity in wireless transmitters. Presents latest trends in designing broadband power amplifiers; Covers latest techniques for using nonlinear model embedding in designing power amplifiers based on waveform engineering; Describes the latest techniques for extending bandwidth of load modulation based power amplifiers such as Doherty power amplifier and Chireix outphasing amplifiers; Includes coverage of hybrid analog/digital predistortion as wideband solution for wireless transmitters; Discusses recent trends on on-chip power amplifier design with GaN /GaAs MMICs for high frequency applications.
This book proposes alternative switched capacitor techniques which allow the achievement of higher intrinsic analogue functional accuracy than previously possible in such application areas as analogue filter and ADC design. The validity of the concepts developed and analyzed in Switched-Capacitor Techniques for High-Accuracy Filter and ADC Design has been demonstrated in practice with the design of CMOS SC bandpass filters and algorithmic ADC stages.
This book focuses on the development of circuit and system design techniques for millimeter wave wireless communication systems above 90GHz and fabricated in nanometer scale CMOS technologies. The authors demonstrate a hands-on methodology that was applied to design six different chips, in order to overcome a variety of design challenges. Behavior of both actives and passives, and how to design them to achieve high performance is discussed in detail. This book serves as a valuable reference for millimeter wave designers, working at both the transistor level and system level.
This book focuses on the development of design techniques and methodologies for 60-GHz and E-band power amplifiers and transmitters at device, circuit and layout levels. The authors show the recent development of millimeter-wave design techniques, especially of power amplifiers and transmitters, and presents novel design concepts, such as “power transistor layout” and “4-way parallel-series power combiner”, that can enhance the output power and efficiency of power amplifiers in a compact silicon area. Five state-of-the-art 60-GHz and E-band designs with measured results are demonstrated to prove the effectiveness of the design concepts and hands-on methodologies presented. This book serves as a valuable reference for circuit designers to develop millimeter-wave building blocks for future 5G applications.
This book tackles the challenges of designing mm-wave circuits in 16nm FinFET, from the elementary transistor level to a measured D-band transmitter. The design of crucial building blocks such as oscillators and power amplifiers are covered through theoretical limitations, design methodology and measurement. Offers first book on design of mm-wave circuits above 100GHz in an advanced 16nm FinFET digital technology; Covers fundamentals of transistor layout, circuit implementation and measurements; Provides single-source reference to information otherwise only available in disparate literature.
This book discusses design techniques, layout details and measurements of several key analog building blocks that currently limit the performance of 5G and E-Band transceivers implemented in deep-scaled CMOS. The authors present recent developments in low-noise quadrature VCOs and tunable inductor-less frequency dividers. Moreover, the design of low-loss broadband transformer-based filters that realize inter-stage matching, power division/combining and impedance transformation is discussed in great detail. The design and measurements of a low-noise amplifier, a downconverter and a highly-linear power amplifier that leverage the proposed techniques are shown. All the prototypes were realized in advanced nanometer scaled CMOS technologies without RF thick to metal option.
This book tackles both high efficiency and high linearity power amplifier (PA) design in low-voltage CMOS. With its emphasis on theory, design and implementation, the book offers a guide for those actively involved in the design of fully integrated CMOS wireless transceivers. Offering mathematical background, as well as intuitive insight, the book is essential reading for RF design engineers and researchers and is also suitable as a text book.
This book describes the design of fully digital multistandard transmitter front-ends which can directly drive one or more switching power amplifiers, thus eliminating all other analog components. After reviewing different architectures, the authors focus on polar architectures using pulse width modulation (PWM), which are entirely based on unclocked delay lines and other continuous-time digital hardware. As a result, readers are enabled to shift accuracy concerns from the voltage domain to the time domain, to coincide with submicron CMOS technology scaling. The authors present different architectural options and compare them, based on their effect on the signal and spectrum quality. Next, a high-level theoretical analysis of two different PWM-based architectures – baseband PWM and RF PWM – is made. On the circuit level, traditional digital components and design techniques are revisited from the point of view of continuous-time digital circuits. Important design criteria are identified and different solutions are presented, along with their advantages and disadvantages. Finally, two chips designed in nanometer CMOS technologies are described, along with measurement results for validation.
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