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Physics And Modeling Of Mosfets, The: Surface-potential Model Hisim

By: Tatsuya Ezaki,Hans Jurgen Mattausch,Mitiko Miura-mattausch

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Physics And Modeling Of Mosfets, The: Surface-potential Model Hisim

By: Tatsuya Ezaki,Hans Jurgen Mattausch,Mitiko Miura-mattausch

This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation.

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Page Count

381

Publisher

World Scientific

Published Date

ISBN 10

9814477575

ISBN 13

9789814477574

The Physics and Modeling of Mosfets

Surface-Potential Model Hisim

By: Mitiko Miura-Mattausch

Write a review Read reviews Take a Quiz Solve Book Puzzle

The Physics and Modeling of Mosfets

Surface-Potential Model Hisim

By: Mitiko Miura-Mattausch

This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation.

Average ratings

N/A

5

0%

4

0%

3

0%

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Solve jigsaw puzzle

Age

Page Count

381

Publisher

World Scientific

Published Date

ISBN 10

9812812059

ISBN 13

9789812812056

The Physics and Modeling of Mosfets

Surface-Potential Model Hisim

By: Mitiko Miura-Mattausch

Write a review Read reviews Take a Quiz Solve Book Puzzle

The Physics and Modeling of Mosfets

Surface-Potential Model Hisim

By: Mitiko Miura-Mattausch

This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation.

Average ratings

N/A

5

0%

4

0%

3

0%

2

0%

1

0%

Solve jigsaw puzzle

Age

Page Count

381

Publisher

World Scientific

Published Date

ISBN 10

9812812059

ISBN 13

9789812812056

Physics And Modeling Of Mosfets, The: Surface-potential Model Hisim

By: Tatsuya Ezaki,Hans Jurgen Mattausch,Mitiko Miura-mattausch

Write a review Read reviews Take a Quiz Solve Book Puzzle

Physics And Modeling Of Mosfets, The: Surface-potential Model Hisim

By: Tatsuya Ezaki,Hans Jurgen Mattausch,Mitiko Miura-mattausch

This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation.

Average ratings

N/A

5

0%

4

0%

3

0%

2

0%

1

0%

Solve jigsaw puzzle

Age

Page Count

381

Publisher

World Scientific

Published Date

ISBN 10

9814477575

ISBN 13

9789814477574