This volume includes highlights of the theories and experimental findings that underlie essential phenomena occurring in quantum-based devices and systems as well as the principles of operation of selected novel quantum-based electronic devices and systems. A number of the emerging approaches to creating new types of quantum-based electronic devices and systems are also discussed.
Novel heterostructure devices. Electron-phonon interactions in intersubband laser heterostructures / M.V. Kisin, M. Dutta, and M.A. Stroscio -- Quantum dot infrared detectors and sources / P. Bhattacharya ... [et al.] -- Generation of terahertz emission based on intersubband transitions / Q. Hu -- Mid-infrared GaSb-based lasers with Type-I heterointerfaces / D.V. Donetsky, R.U. Martinelli, and G.L. Belenky -- Advances in quantum-dot research and technology: the path to applications in biology / M.A. Stroscio and M. Dutta -- Potential device applications and basic properties. High-field electron transport controlled by optical phonon emission in nitrides / S.M. Komirenko ... [et al.] -- Cooling by inverse Nottingham effect with resonant tunneling / Y. Yu, R.F. Greene, and R. Tsu -- The physics of single electron transistors / M.A. Kastner -- Carrier capture and transport within tunnel injection lasers: a quantum transport analysis / L.F. Register ... [et al.] -- The influence of environmental effects on the acoustic phonon spectra in quantum-dot heterostructures / S. Rufo, M. Dutta, and M.A. Stroscio -- Quantum devices with multipole-electrode - heterojunctions hybrid structures / R. Tsu.
Increasing miniaturization of devices, components, and integrated systems requires developments in the capacity to measure, organize, and manipulate matter at the nanoscale. This textbook, first published in 2007, is a comprehensive, interdisciplinary account of the technology and science that underpin nanoelectronics, covering the underlying physics, nanostructures, nanomaterials, and nanodevices. Without assuming prior knowledge of quantum physics, this book provides a unifying framework for the basic ideas needed to understand the recent developments in the field. Numerous illustrations, homework problems and interactive Java applets help the student to appreciate the basic principles of nanotechnology, and to apply them to real problems. Written in a clear yet rigorous and interdisciplinary manner, this textbook is suitable for advanced undergraduate and graduate students in electrical and electronic engineering, nanoscience, materials, bioengineering, and chemical engineering.
Quantum Heterostructures provides a detailed description of the key physical and engineering principles of quantum semiconductor heterostructures. Blending important concepts from physics, materials science, and electrical engineering, it also explains clearly the behavior and operating features of modern microelectronic and optoelectronic devices. The authors begin by outlining the trends that have driven development in this field, most importantly the need for high-performance devices in computer, information, and communications technologies. They then describe the basics of quantum nanoelectronics, including various transport mechanisms. In the latter part of the book, they cover novel microelectronic devices, and optical devices based on quantum heterostructures. The book contains many homework problems and is suitable as a textbook for undergraduate and graduate courses in electrical engineering, physics, or materials science. It will also be of great interest to those involved in research or development in microelectronic or optoelectronic devices.
The last research frontier in high frequency electronics now lies in the so-called THz (or submillimeter-wave) regime between the traditional microwave and infrared domains. Significant scientific and technical challenges within the terahertz (THz) frequency regime have recently motivated an array of new research activities. During the last few years, major research programs have emerged that are focused on advancing the state of the art in THz frequency electronic technology and on investigating novel applications of THz frequency sensing. This book serves as a detailed reference for the new THz frequency technological advances that are emerging across a wide spectrum of sensing and technology areas.
The unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration atheterojunction interfaces, high breakdown field, and low thermalimpedance of GaN-based films grown over SiC or bulk AlN substratesmake nitride-based electronic devices very promising.
Heteroepitaxial films are commonplace among today's electronic and photonic devices. The realization of new and better devices relies on the refinement of epitaxial techniques and improved understanding of the physics underlying epitaxial growth. This book provides an up-to-date report on a wide range of materials systems. The first half reviews metallic and dielectric thin films, including chapters on metals, rare earths, metal-oxide layers, fluorides, and high-c superconductors. The second half covers semiconductor systems, reviewing developments in group-IV, arsenide, phosphide, antimonide, nitride, II-VI and IV-VI heteroepitaxy. Topics important to several systems are covered in chapters on atomic processes, ordering and growth dynamics.
In this book, leading experts on quantum dot theory and technology provide comprehensive reviews of all aspects of quantum dot systems. The following topics are covered: (1) energy states in quantum dots, including the effects of strain and many-body effects; (2) self-assembly and self-ordering of quantum dots in semiconductor systems; (3) growth, structures, and optical properties of III-nitride quantum dots; (4) quantum dot lasers.
The 2002 Workshop on Frontiers in Electronics was the third in the series of WOFE workshops. Over 70 leading experts from academia, industry, and government agencies reported on the most recent developments in their fields and exchanged views on future trends and directions of the electronics and photonics industry. The issues they addressed ranged from system-on-chip to DNA doping, from ultrathin SOI to electrotextiles, from photonics integration on the ULSI platform to wide band gap semiconductor devices and solid state lighting. The rapid pace of electronic technology evolution compels a merger of different technical areas, and WOFE-02 provided a unique opportunity for cross-fertilization of the emerging fields of microelectronics, photonics, and nanoelectronics. The workshop was informal and stimulated provocative views, visionary outlooks, and discussions on controversial issues. Contents: Optical Wave Propagation in Periodic Structures (A Yariv & S Mookherjea); MEMS Technology for Advanced Telecommunication Applications (H-G Lee et al.); Low Temperature Physics at Room Temperature in Water: Charge Inversion in Chemical and Biological Systems (A Yu Grosberg et al.); Materials for Strained Silicon Devices (P M Mooney); System-on-Chip Integration (R R Doering); Nanoelectronics: Some Current Aspects and Prospects (R Hull et al.); Electrotextiles (E Ethridge & D Urban); System Impact of Silicon Carbide Power Devices (B Ozpineci et al.); Hot-Phonon Limited Electron Energy Relaxation in AIN/GaN (A Matulionis et al.); Polar-Optical Phonon Enhancement of Harmonic Generation in Schottky Diodes (B Gelmont et al.); Environmental Sensing of Chemical and Biological Warfare Agents in the THz Region (A C Samuels et al.); Thermal Management in Optoelectronics (D K Johnstone); Spectral Response Measurements of Short Wave Infrared Detectors (SWIR) (T F Refaat et al.); Full-Chip Power-Supply Noise: The Effect of On-Chip Power-Rail Inductance (C W Fok & D L Pulfrey); Quantum Dot Superlattices in a Constant Electric Field: Localization and Bloch Oscillations (R A Suris & I A Dmitriev); and other papers. Readership: Scientists, engineers and graduate students working in the area of microelectronics, semiconductor materials and devices.
This work describes the experimental study of electron-boson interactions in superconductors by means of inelastic electron tunneling spectroscopy performed with a scanning tunneling microscope (STM) at temperatures below 1 K. This new approach allows the direct measurement of the Eliashberg function of conventional superconductors as demonstrated on lead (Pb) and niobium (Nb). Preparative experiments on unconventional iron-pnictides are presented in the end.
The last research frontier in high frequency electronics lies in the so-called terahertz (or submillimeter wave) regime, between the traditional microwave and the infrared domains. Significant scientific and technical challenges within the terahertz (THz) frequency regime have recently motivated an array of new research activities. During the last few years, major research programs have emerged that are focused on advancing the state of the art in THz frequency electronic technology and on investigating novel applications of THz frequency sensing. This book provides a detailed review of the new THz frequency technological developments that are emerging across a wide spectrum of sensing and technology areas.Volume II presents cutting edge results in two primary areas: (1) research that is attempting to establish THz-frequency sensing as a new characterization tool for chemical, biological and semiconductor materials, and (2) theoretical and experimental efforts to define new device concepts within the ?THz gap?.
This book focuses on the theory of phonon interactions in nanoscale structures with particular emphasis on modern electronic and optoelectronic devices. The continuing progress in the fabrication of semiconductor nanostructures with lower dimensional features has led to devices with enhanced functionality and even novel devices with new operating principles. The critical role of phonon effects in such semiconductor devices is well known. There is therefore a great need for a greater awareness and understanding of confined phonon effects. A key goal of this book is to describe tractable models of confined phonons and how these are applied to calculations of basic properties and phenomena of semiconductor heterostructures. The level of presentation is appropriate for undergraduate and graduate students in physics and engineering with some background in quantum mechanics and solid state physics or devices. A basic understanding of electromagnetism and classical acoustics is assumed.
Frontiers in Electronics is divided into four sections: advanced terahertz and photonics devices; silicon and germanium on insulator and advanced CMOS and MOSHFETs; nanomaterials and nanodevices; and wide band gap technology for high power and UV photonics. This book will be useful for nano-microelectronics scientists, engineers, and visionary research leaders. It is also recommended to graduate students working at the frontiers of the nanoelectronics and microscience.
Presents chemical state imaging methods useful on distance scales ranging from individual atoms to millimeters. This work is intended for chemists familiar with modern spectroscopies, but includes tutorial material on basic imaging processes for those with little background in the field.
After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices ? power switching Schottky diodes and high temperature MESFETs ? are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.
Emerging Nanomedicines for Diabetes Mellitus Theranostics provides readers with information on the development of efficacious nanomedicines as potential theranostic agents for diabetes. The book discusses the application of various novel nanomaterials and nanocomposites for targeted delivery of insulin, glucose sensing, including nano-tattoos as glucose monitors, biosynthesized nanoparticles for diabetes treatment, and pre-clinical and clinical assays to evaluate the efficacy of nanomedicines for diabetes treatment. This is an important references source for materials scientists, pharmaceutical scientists and biomedical engineers who want to increase their understanding of how nanotechnology is being used to improve diabetes treatment. Diabetes has emerged as one of the most common diseases associated with lifestyle choices in the modern world, with significant mortality rates. Conventional treatment methods mainly involve insulin-based therapies. However, insulin therapy possesses several limitations such as weight gain and hypoglycemia. Thus, advanced research in nanomedicine is targeting the development of new and improved diagnostics and treatment methods for diabetes. - Explores the significance of nanomaterials and nanocomposites for the controlled delivery of insulin and effective diagnosis of diabetes - Assesses the efficacy of novel nano-tattoos as an emerging glucose monitoring system and the potential of biosynthesized nanoparticles as pharmaceutical ingredients for diabetes treatment - Describes various pre-clinical and clinical assays to evaluate the toxicity of nanomedicines, along with methods to mitigate the challenges associated with effective diabetes therapy via the use of nanorobots, nanoformulations and smartphone-based technologies
Expectations of a technological revolution are associated with nanotechnology, and indeed the generation, modification and utilization of objects with tiniest dimensions already permeates science and research in a way that the absence of nanotechnology is no longer conceivable. It has progressed to an independent interdisciplinary field, its great success due to the purposeful combination of physical, mechanical and molecular techniques. This book starts out with the most important fundamentals of microtechnology and chemistry on which the understanding of shaping nanoscale structures are based. Next, a variety of examples illustrate the fabrication of nanostructures from different materials, before, finally, methods for characterization of the generated structures are presented. This fascinating introduction provides both scientists and engineers with insights into the "other side" of nanotechnology.
Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices.The aim of this book is to summarize the main experimental results on avalanche and breakdown phenomena in semiconductors and semiconductor devices and to analyze their features from a unified point of view. Attention is focused on the phenomenology of avalanche multiplication and the various kinds of breakdown phenomena and their qualitative analysis.
This book considers the problems of death and the hereafter and how these ages-old problems ought to be addressed in light of our continuing progress. A materialistic viewpoint of reality is assumed, denying the likelihood of supernatural or other superhuman assistance. Death, however, is not seen as inevitable or even irreversible; it is maintained that the problem can and should be addressed scientifically in all of its aspects. The book thus follows recent, immortalist thinking that places hopes in future advances in our understanding and technology. A functionalist, reductionist argument is developed for the possibility of resurrecting the dead through the eventual creation of replicas and related constructs. Meanwhile, it is urged, medical advances leading to the conquest of biological death should be pursued, along with cryonics: freezing the newly deceased for possible, eventual reanimation. A common ground thus is sought between two hitherto largely independent strands of scientific immortalism, the one based on hopes in a remote but hyperadvanced future, the other on the nearer-term prospects of presently advancing technology. The resulting philosophy, encompassing both past and future, is directed toward the long-term interests of each sentient being, and it thereby acquires a moral dimension. The immortalization of humans and other life-forms is seen as a great moral project and labor of love that will unite us in a common cause and provide a meaningful destiny. A rational and thorough exploration of human potential. Few have considered, much less visualized, the profound changes set to occur over the next few decades through exponential advances in science and philosophy. Mike Perry has, and he shares his vision with eloquence. --Jim Halperin, author of The Truth Machine and The First Immortal.
This book focuses on the theory of phonon interactions in nanoscale structures with particular emphasis on modern electronic and optoelectronic devices. The continuing progress in the fabrication of semiconductor nanostructures with lower dimensional features has led to devices with enhanced functionality and even novel devices with new operating principles. The critical role of phonon effects in such semiconductor devices is well known. There is therefore a great need for a greater awareness and understanding of confined phonon effects. A key goal of this book is to describe tractable models of confined phonons and how these are applied to calculations of basic properties and phenomena of semiconductor heterostructures. The level of presentation is appropriate for undergraduate and graduate students in physics and engineering with some background in quantum mechanics and solid state physics or devices. A basic understanding of electromagnetism and classical acoustics is assumed.
Quantum Heterostructures provides a detailed description of the key physical and engineering principles of quantum semiconductor heterostructures. Blending important concepts from physics, materials science, and electrical engineering, it also explains clearly the behavior and operating features of modern microelectronic and optoelectronic devices. The authors begin by outlining the trends that have driven development in this field, most importantly the need for high-performance devices in computer, information, and communications technologies. They then describe the basics of quantum nanoelectronics, including various transport mechanisms. In the latter part of the book, they cover novel microelectronic devices, and optical devices based on quantum heterostructures. The book contains many homework problems and is suitable as a textbook for undergraduate and graduate courses in electrical engineering, physics, or materials science. It will also be of great interest to those involved in research or development in microelectronic or optoelectronic devices.
This volume provides valuable summaries on many aspects of advanced semiconductor heterostructures and highlights the great variety of semiconductor heterostructures that has emerged since their original conception. As exemplified by the chapters in this book, recent progress on advanced semiconductor heterostructures spans a truly remarkable range of scientific fields with an associated diversity of applications. Some of these applications will undoubtedly revolutionize critically important facets of modern technology. At the heart of these advances is the ability to design and control the properties of semiconductor devices on the nanoscale. As an example, the intersubband lasers discussed in this book have a broad range of previously unobtainable characteristics and associated applications as a result of the nanoscale dimensional control of the underlying semiconductor heterostructures. As this book illustrates, an astounding variety of heterostructures can be fabricated with current technology; the potentially widespread use of layered quantum dots fabricated with nanoscale precision in biological applications opens up exciting advances in medicine. In addition, many more excellent examples of the remarkable impact being made through the use of semiconductor heterostructures are given. The summaries in this volume provide timely insights into what we know now about selected areas of advanced semiconductor heterostructures and also provide foundations for further developments.
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