The transistor is the key enabler of modern electronics. Progress in transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to device physics are less and less suitable. These lectures describe a way of understanding MOSFETs and other transistors that is much more suitable than traditional approaches when the critical dimensions are measured in nanometers. It uses a novel, “bottom-up approach” that agrees with traditional methods when devices are large, but that also works for nano-devices. Surprisingly, the final result looks much like the traditional, textbook, transistor models, but the parameters in the equations have simple, clear interpretations at the nanoscale. The objective is to provide readers with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. This book is written in a way that is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits.
Current leading-edge CMOS transistors are about as small as they will get. We now have a simple, clear, very physical understanding of how these devices function, but it has not yet entered our textbooks. Besides, CMOS logic transistors, power transistors are increasingly important as are III-V heterostructure transistors for high-frequency communication. Transistor reliability is also important but rarely treated in introductory textbooks.As we begin a new era, in which making transistors smaller will no longer be a major driving force for progress, it is time to look back at what we have learned in transistor research. Today we see a need to convey as simply and clearly as possible the essential physics of the device that makes modern electronics possible. That is the goal of these lectures. This volume rearranges the familiar topics and distills the most essential among them, while adding most recent approaches which have become crucial to the discussion. To follow the lectures, readers need only a basic understanding of semiconductor physics. Familiarity with transistors and electronic circuits is helpful, but not assumed.Related Link(s)
These lectures are designed to introduce students to the fundamentals of carrier transport in nano-devices using a novel, “bottom up approach” that agrees with traditional methods when devices are large, but which also works for nano-devices. The goal is to help students learn how to think about carrier transport at the nanoscale and also how the bottom up approach provides a new perspective to traditional concepts like mobility and drift-diffusion equations. The lectures are designed for engineers and scientists and others who need a working knowledge of near-equilibrium (“low-field” or “linear”) transport. Applications of the theory and measurement considerations are also addressed. The lectures serve as a starting point to an extensive set of instructional materials available online.
This report explores the key issues concerning how tourism might facilitate inclusive growth. It provides detailed analysis of both the direct and indirect channels through which the gains from tourism are achieved, and the existing gaps that prevent a fuller capturing of forward and backward multipliers."--Publisher's website
The transistor is the key enabler of modern electronics. Progress in transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to device physics are less and less suitable. These lectures describe a way of understanding MOSFETs and other transistors that is much more suitable than traditional approaches when the critical dimensions are measured in nanometers. It uses a novel, "bottom-up approach" that agrees with traditional methods when devices are large, but that also works for nano-devices. Surprisingly, the final result looks much like the traditional, textbook, transistor models, but the parameters in the equations have simple, clear interpretations at the nanoscale. The objective is to provide readers with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. This book is written in a way that is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits.
Market: M3 clerks; FP residents; family physicians; nurse practitioners; physician assistants; pharma companies Completely updated to include brand-new features, including PDA download of critical content Truly a “portable brain” for common complaints, Features an expanded list of internationally based contributors
GET YOUR HIGHEST SCORE POSSIBLE ON THE PAIN MEDICINE CERTIFICATION AND RECERTIFICATION EXAM WITH THIS ALL-IN-ONE REVIEW This concise yet comprehensive review, edited by two of today's leading pain clinicians/scientists, is the perfect tool to prepare for certification and recertification. It is also an outstanding clinical companion when time is of the essence and authoritative information is needed quickly. Featuring insights from renowned experts, the book's high-yield bulleted presentation condenses and simplifies essential must-know information for the easiest and most time-efficient learning and retention possible. HERE'S WHY THIS IS THE BEST REVIEW OF PAIN MEDICINE AVAILABLE TODAY: Every chapter contains key points that encapsulate the most importantinformation for a given topic Valuable opening section on Test Preparation and Planning reviewsimportant aspects of test taking such as planning study time, planningmaterial to cover, study skills, and taking the actual exam Section on Basic Principles covers key topics such as Pain Physiology,Epidemiology, Gender Issues, Placebo Response, Pain Taxonomy, and Ethics Other sections include: Evaluation of the Patient, Analgesic Pharmacology,Acute Pain Management, Regional Pain, Chronic Pain Management, andSpecial Techniques in Pain Management--which covers the latest advancesin interventional pain Coverage includes alternative treatments such as acupuncture and TENS Numerous photographs and drawings enhance the text
Recognized in its first edition as the only textbook to present a truly biopsychosocial approach, Barlow and Durand's groundbreaking text is rapidly becoming the standard by which other texts are judged. In this Second Edition, David Barlow and V. Mark Durand offer a consistent organizational structure that makes the material easy to learn, fascinating real-life cases integrated into the flow of each chapter, a mix of clinical and scientific approaches, a conversational writing style, and a variety of new built-in study aids designed to make the Second Edition easy to learn from and easy to use. Throughout the Second Edition, the authors' class-tested integrative approach helps students understand how each disorder is determined by multiple forces: biological, psychological, cultural, social, familial, and environmental.
Current leading-edge CMOS transistors are about as small as they will get. We now have a simple, clear, very physical understanding of how these devices function, but it has not yet entered our textbooks. Besides, CMOS logic transistors, power transistors are increasingly important as are III-V heterostructure transistors for high-frequency communication. Transistor reliability is also important but rarely treated in introductory textbooks.As we begin a new era, in which making transistors smaller will no longer be a major driving force for progress, it is time to look back at what we have learned in transistor research. Today we see a need to convey as simply and clearly as possible the essential physics of the device that makes modern electronics possible. That is the goal of these lectures. This volume rearranges the familiar topics and distills the most essential among them, while adding most recent approaches which have become crucial to the discussion. To follow the lectures, readers need only a basic understanding of semiconductor physics. Familiarity with transistors and electronic circuits is helpful, but not assumed.Related Link(s)
The definitive evidence-based introduction to patient history-taking NOW IN FULL COLOR A Doody’s Core Title for 2019! For medical students and other health professions students, an accurate differential diagnosis starts with The Patient History. The ideal companion to major textbooks on the physical examination, this trusted guide is widely acclaimed for its skill-building, and evidence based approach to the medical history. Now in full color, The Patient History defines best practices for the patient interview, explaining how to effectively elicit information from the patient in order to generate an accurate differential diagnosis. The second edition features all-new chapters, case scenarios, and a wealth of diagnostic algorithms. Introductory chapters articulate the fundamental principles of medical interviewing. The book employs a rigorous evidenced-based approach, reviewing and highlighting relevant citations from the literature throughout each chapter. Features NEW! Case scenarios introduce each chapter and place history-taking principles in clinical context NEW! Self-assessment multiple choice Q&A conclude each chapter—an ideal review for students seeking to assess their retention of chapter material NEW! Full-color presentation Essential chapter on red eye, pruritus, and hair loss Symptom-based chapters covering 59 common symptoms and clinical presentations Diagnostic approach section after each chapter featuring color algorithms and several multiple-choice questions Hundreds of practical, high-yield questions to guide the history, ranging from basic queries to those appropriate for more experienced clinicians
Features information on nations, states, and cities, celebrities, sports, consumerism, the arts, health and nutrition, United States and world history, and numerous other subjects.
To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary. Nanoscale Transistors provides a description on the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working on nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. After basic concepts are reviewed, the text summarizes the essentials of traditional semiconductor devices, digital circuits, and systems to supply a baseline against which new devices can be assessed. A nontraditional view of the MOSFET using concepts that are valid at nanoscale is developed and then applied to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. This practical guide then explore the limits of devices by discussing conduction in single molecules
These lectures are designed to introduce students to the fundamentals of carrier transport in nano-devices using a novel, “bottom up approach” that agrees with traditional methods when devices are large, but which also works for nano-devices. The goal is to help students learn how to think about carrier transport at the nanoscale and also how the bottom up approach provides a new perspective to traditional concepts like mobility and drift-diffusion equations. The lectures are designed for engineers and scientists and others who need a working knowledge of near-equilibrium (“low-field” or “linear”) transport. Applications of the theory and measurement considerations are also addressed. The lectures serve as a starting point to an extensive set of instructional materials available online.
Fundamentals of Carrier Transport is an accessible introduction to the behaviour of charged carriers in semiconductors and semiconductor devices. It is written specifically for engineers and students without an extensive background in quantum mechanics and solid-state physics. This second edition contains many new and updated sections, including a completely new chapter on transport in ultrasmall devices. The author begins by covering a range of essential physical principles. He then goes on to cover both low- and high-field transport, scattering, transport in devices, and transport in mesoscopic systems. The use of Monte Carlo simulation methods is explained in detail. Many homework exercises are provided and there are a variety of worked examples. The book will be of great interest to graduate students of electrical engineering and applied physics. It will also be invaluable to practising engineers working on semiconductor device research and development.
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