Low Temperature Chemical Nanofabrication: Recent Progress, Challenges and Emerging Technologies offers a thorough and theoretical background to nanoscale fabrication phenomena, also covering important practical applications. It covers the conventional top down and the newly emerging bottom up processing methods. The latter has proven to be feasible for obtaining device quality material and can either be performed using high or low temperature processing. Low temperature (?100 oC), in particular, is becoming increasingly used due to its simplicity and varied applications, with huge benefits for developing new devices and flexible non-conventional substrates. This important resource is ideal for researchers seeking to learn more about the fundamental theories related to nanoscale phenomena and nanofabrication. Provides extensive coverage of nanofabrication techniques, allowing researchers to learn different nanofabrication techniques Explores different applications for low-temperature chemical nanofabrication Cogently explains how low-temperature chemical nanofabrication differs from other nanofabrication techniques, assessing the pros and cons of each
This book is the first one devoted to high-dimensional (or large-scale) diffusion stochastic processes (DSPs) with nonlinear coefficients. These processes are closely associated with nonlinear Ito's stochastic ordinary differential equations (ISODEs) and with the space-discretized versions of nonlinear Ito's stochastic partial integro-differential equations. The latter models include Ito's stochastic partial differential equations (ISPDEs).The book presents the new analytical treatment which can serve as the basis of a combined, analytical-numerical approach to greater computational efficiency in engineering problems. A few examples discussed in the book include: the high-dimensional DSPs described with the ISODE systems for semiconductor circuits; the nonrandom model for stochastic resonance (and other noise-induced phenomena) in high-dimensional DSPs; the modification of the well-known stochastic-adaptive-interpolation method by means of bases of function spaces; ISPDEs as the tool to consistently model non-Markov phenomena; the ISPDE system for semiconductor devices; the corresponding classification of charge transport in macroscale, mesoscale and microscale semiconductor regions based on the wave-diffusion equation; the fully time-domain nonlinear-friction aware analytical model for the velocity covariance of particle of uniform fluid, simple or dispersed; the specific time-domain analytics for the long, non-exponential “tails” of the velocity in case of the hard-sphere fluid.These examples demonstrate not only the capabilities of the developed techniques but also emphasize the usefulness of the complex-system-related approaches to solve some problems which have not been solved with the traditional, statistical-physics methods yet. From this veiwpoint, the book can be regarded as a kind of complement to such books as “Introduction to the Physics of Complex Systems. The Mesoscopic Approach to Fluctuations, Nonlinearity and Self-Organization” by Serra, Andretta, Compiani and Zanarini, “Stochastic Dynamical Systems. Concepts, Numerical Methods, Data Analysis” and “Statistical Physics: An Advanced Approach with Applications” by Honerkamp which deal with physics of complex systems, some of the corresponding analysis methods and an innovative, stochastics-based vision of theoretical physics.To facilitate the reading by nonmathematicians, the introductory chapter outlines the basic notions and results of theory of Markov and diffusion stochastic processes without involving the measure-theoretical approach. This presentation is based on probability densities commonly used in engineering and applied sciences.
This detailed book addresses three main areas of solid state electronics, providing an insight into the state of the art in material and device research that will be of interest to all those involved in compound semiconductors.
The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling. * Fully-revised and updated 2nd edition incorporating important recent breakthroughs and a complete literature review * The extensive bibliography of over 400 papers provides a comprehensive and coherent overview of the subject * Appropriate for students and senior researchers
This book is the first one devoted to high-dimensional (or large-scale) diffusion stochastic processes (DSPs) with nonlinear coefficients. These processes are closely associated with nonlinear Ito's stochastic ordinary differential equations (ISODEs) and with the space-discretized versions of nonlinear Ito's stochastic partial integro-differential equations. The latter models include Ito's stochastic partial differential equations (ISPDEs).The book presents the new analytical treatment which can serve as the basis of a combined, analytical-numerical approach to greater computational efficiency in engineering problems. A few examples discussed in the book include: the high-dimensional DSPs described with the ISODE systems for semiconductor circuits; the nonrandom model for stochastic resonance (and other noise-induced phenomena) in high-dimensional DSPs; the modification of the well-known stochastic-adaptive-interpolation method by means of bases of function spaces; ISPDEs as the tool to consistently model non-Markov phenomena; the ISPDE system for semiconductor devices; the corresponding classification of charge transport in macroscale, mesoscale and microscale semiconductor regions based on the wave-diffusion equation; the fully time-domain nonlinear-friction aware analytical model for the velocity covariance of particle of uniform fluid, simple or dispersed; the specific time-domain analytics for the long, non-exponential “tails” of the velocity in case of the hard-sphere fluid.These examples demonstrate not only the capabilities of the developed techniques but also emphasize the usefulness of the complex-system-related approaches to solve some problems which have not been solved with the traditional, statistical-physics methods yet. From this veiwpoint, the book can be regarded as a kind of complement to such books as “Introduction to the Physics of Complex Systems. The Mesoscopic Approach to Fluctuations, Nonlinearity and Self-Organization” by Serra, Andretta, Compiani and Zanarini, “Stochastic Dynamical Systems. Concepts, Numerical Methods, Data Analysis” and “Statistical Physics: An Advanced Approach with Applications” by Honerkamp which deal with physics of complex systems, some of the corresponding analysis methods and an innovative, stochastics-based vision of theoretical physics.To facilitate the reading by nonmathematicians, the introductory chapter outlines the basic notions and results of theory of Markov and diffusion stochastic processes without involving the measure-theoretical approach. This presentation is based on probability densities commonly used in engineering and applied sciences.
This detailed book addresses three main areas of solid state electronics, providing an insight into the state of the art in material and device research that will be of interest to all those involved in compound semiconductors.
Low Temperature Chemical Nanofabrication: Recent Progress, Challenges and Emerging Technologies offers a thorough and theoretical background to nanoscale fabrication phenomena, also covering important practical applications. It covers the conventional top down and the newly emerging bottom up processing methods. The latter has proven to be feasible for obtaining device quality material and can either be performed using high or low temperature processing. Low temperature (?100 oC), in particular, is becoming increasingly used due to its simplicity and varied applications, with huge benefits for developing new devices and flexible non-conventional substrates. This important resource is ideal for researchers seeking to learn more about the fundamental theories related to nanoscale phenomena and nanofabrication. Provides extensive coverage of nanofabrication techniques, allowing researchers to learn different nanofabrication techniques Explores different applications for low-temperature chemical nanofabrication Cogently explains how low-temperature chemical nanofabrication differs from other nanofabrication techniques, assessing the pros and cons of each
This work was motivated by the tremendous progress made in heterojunction-based device performances in the 1980s. By combining heterojunction and small size effects, conventional device performances have been improved and new physics discovered.
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