Dr Houghton has revised the acclaimed first edition of The Physics of Atmospheres in order to bring this important textbook completely up-to-date. Several factors have led to vigorous growth in the atmospheric sciences, particularly the availability of powerful computers for detailed modelling, the investigation of the atmospheres of other planets, and techniques of remote sensing. The author describes the physical processes governing the structure and circulation of the atmosphere. Simple physical models are constructed by applying the principles of classical thermodynamics, radiative transfer and fluid mechanics, together with analytic and numerical techniques. These models are applied to real planetary atmospheres. This new edition is essential for undergraduates or graduate students studying atmospheric physics, climatology or meteorology, as well as planetary scientists with an interest in atmospheres.
When you see a nicely presented set of data, the natural response is: “How did they do that; what tricks did they use; and how can I do that for myself?” Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually held close to the vest and rarely divulged. Shamefully ignored in the technical literature, measurement and modeling of high-speed semiconductor devices is a fine art. Robust measuring and modeling at the levels of performance found in modern SiGe devices requires extreme dexterity in the laboratory to obtain reliable data, and then a valid model to fit that data. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on measurement and modeling of high-speed silicon heterostructure devices. The chapter authors provide experience-based tricks-of-the-trade and the subtle nuances of measuring and modeling advanced devices, making this an important reference for the semiconductor industry. It includes easy-to-reference appendices covering topics such as the properties of silicon and germanium, the generalized Moll-Ross relations, the integral charge-control model, and sample SiGe HBT compact model parameters.
What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.
SiGe HBT BiCMOS technology is the obvious groundbreaker of the Si heterostructures application space. To date virtually every major player in the communications electronics market either has SiGe up and running in-house or is using someone else’s SiGe fab as foundry for their designers. Key to this success lies in successful integration of the SiGe HBT and Si CMOS, with no loss of performance from either device. Filled with contributions from leading experts, Fabrication of SiGe HBT BiCMOS Technologies brings together a complete discussion of these topics into a single resource. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume examines the design, fabrication, and application of silicon heterostructure transistors. A novel aspect of this book the inclusion of numerous snapshot views of the industrial state-of-the-art for SiGe HBT BiCMOS technology. It has been carefully designed to provide a useful basis of comparison for the current status and future course of the global industry. In addition to the copious technical material and the numerous references contained in each chapter, the book includes easy-to-reference appendices on the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.
No matter how you slice it, semiconductor devices power the communications revolution. Skeptical? Imagine for a moment that you could flip a switch and instantly remove all the integrated circuits from planet Earth. A moment’s reflection would convince you that there is not a single field of human endeavor that would not come to a grinding halt, be it commerce, agriculture, education, medicine, or entertainment. Life, as we have come to expect it, would simply cease to exist. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume covers SiGe circuit applications in the real world. Edited by John D. Cressler, with contributions from leading experts in the field, this book presents a broad overview of the merits of SiGe for emerging communications systems. Coverage spans new techniques for improved LNA design, RF to millimeter-wave IC design, SiGe MMICs, SiGe Millimeter-Wave ICs, and wireless building blocks using SiGe HBTs. The book provides a glimpse into the future, as envisioned by industry leaders.
SiGe HBTs are the most mature of the Si heterostructure devices and not surprisingly the most completely researched and discussed in the technical literature. However, new effects and nuances of device operation are uncovered year-after-year as transistor scaling advances and application targets march steadily upward in frequency and sophistication. Providing a comprehensive treatment of SiGe HBTs, Silicon Heterostructure Devices covers an amazingly diverse set of topics, ranging from basic transistor physics to noise, radiation effects, reliability, and TCAD simulation. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this text explores SiGe heterojunction bipolar transistors (HBTs), heterostructure FETs, various other heterostructure devices, as well as optoelectronic components. The book provides an overview, characteristics, and derivative applications for each device covered. It discusses device physics, broadband noise, performance limits, reliability, engineered substrates, and self-assembling nanostructures. Coverage of optoelectronic devices includes Si/SiGe LEDs, near-infrared detectors, photonic transistors for integrated optoelectronics, and quantum cascade emitters. In addition to this substantial collection of material, the book concludes with a look at the ultimate limits of SiGe HBTs scaling. It contains easy-to-reference appendices on topics including the properties of silicon and germanium, the generalized Moll-Ross relations, and the integral charge-control model, and sample SiGe HBT compact model parameters.
Connectionist Models of Cognition and Perception collects together refereed versions of twenty-three papers presented at the Seventh Neural Computation and Psychology Workshop (NCPW7). This workshop series is a well-established and unique forum that brings together researchers from such diverse disciplines as artificial intelligence, cognitive science, computer science, neurobiology, philosophy and psychology to discuss their latest work on connectionist modelling in psychology.The articles have the main theme of connectionist modelling of cognition and perception, and are organised into six sections, on: cell assemblies, representation, memory, perception, vision and language. This book is an invaluable resource for researchers interested in neural models of psychological phenomena.
First written by Philip Stell and Arnold Maran in 1972, Stell & Maran's Textbook of Head and Neck Surgery and Oncology has been revised in both content and approach over the years to reflect the enormous progress made in the area. Now in its fifth edition, the book remains a key textbook for trainees in otolaryngology and head and neck surgery.
Murray and Nadel’s Textbook of Respiratory Medicine has long been the definitive and comprehensive pulmonary disease reference. Robert J. Mason, MD now presents the fifth edition in full color with new images and highlighted clinical elements. The fully searchable text is also online at www.expertconsult.com, along with regular updates, video clips, additional images, and self-assessment questions. This new edition has been completely updated and remains the essential tool you need to care for patients with pulmonary disease. Consult this title on your favorite e-reader, conduct rapid searches, and adjust font sizes for optimal readability. Compatible with Kindle®, nook®, and other popular devices. Master the scientific principles of respiratory medicine and its clinical applications. Work through differential diagnosis using detailed explanations of each disease entity. Learn new subjects in Pulmonary Medicine including Genetics, Ultrasound, and other key topics. Grasp the Key Points in each chapter. Search the full text online at expertconsult.com, along with downloadable images, regular updates, more than 50 videos, case studies, and self-assessment questions. Consult new chapters covering Ultrasound, Innate Immunity, Adaptive Immunity, Deposition and Clearance, Ventilator-Associated Pneumonia. Find critical information easily using the new full-color design that enhances teaching points and highlights challenging concepts. Apply the expertise and fresh ideas of three new editors—Drs. Thomas R. Martin, Talmadge E. King, Jr., and Dean E. Schraufnagel. Review the latest developments in genetics with advice on how the data will affect patient care.
Global warming and the resulting climate change is one of the most serious environmental problems facing the world community. Global Warming: The Complete Briefing is the most comprehensive guide available to the subject. A world-renowned expert, Sir John Houghton explores the scientific basis of global warming and the likely impacts of climate change on human society, before addressing the action that could be taken by governments, by industry and by individuals to mitigate the effects. The first two editions received excellent reviews, and this completely updated new edition will prove to be the best briefing the student or interested general reader could wish for.
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