The step-by-step guide to administering, scoring, and interpreting the WJ IV® Tests of Cognitive Abilities Essentials of WJ IV® Cognitive Abilities Assessment provides expert, practical advice on how to administer, score, and interpret the WJ IV COG®. Designed to be an easy-to-use reference, the text goes beyond the information found in the WJ IV® examiner's manual to offer full explanations of the tests and clusters on the WJ IV COG®. This essential guide also explains the meaning of all scores and interpretive features and includes valuable advice on clinical applications and illuminating case studies. This clearly written and easily accessible resource offers: Concise chapters with numerous callout boxes highlighting key concepts, numerous examples, and test questions that help you gauge and reinforce your grasp of the information covered. An in-depth chapter on interpretation of the WJ IV COG® which highlights links to interventions for each test based on contemporary theory and research. Expert assessment of the tests' relative strengths and weaknesses. Illustrative case reports with clinical and school-based populations. If you're a school psychologist, clinical psychologist, neuropsychologist, or any professional or graduate student looking to become familiar with the new WJ IV COG®, this is the definitive resource you'll turn to again and again.
With questions on everything the dedicated sports fan could possibly want to know, ranging in difficulty from the challenging to the fiendishly impossible, this book covers the whole field of sport and is perfect for all the family. The Ultimate Sports Challenge comes in multiple-choice format and whether you want to find out who recorded the fastest serve ever in men’s professional tennis, the last NHL team to win the Stanley Cup with a team comprised entirely of Canada-born players or how many fillies have won the Kentucky Derby, this book is for you. It’s the perfect companion for every sports fan with a thirst for sporting trivia. If you’re not a sports-know-it-all when you start these questions, you will be by the time you finish.
These Men She Gave tells the story of Athens, Georgia, during the turbulent years of the Civil War. John F. Stegeman details the many changes Athens and Clarke County underwent during the war. The community was highly involved with the seccession movement and the formation of the Confederacy. Stegeman tells how the town was able to escape destruction on an August day in 1864 when the Civil War came to the area and how the town would eventually lose many men to the war. The book includes appendices that include information such as a list of the members of the Ladies Aid Society in 1961, a roster of Clarke County companies in the army of Northern Virginia, and mortality lists of Clarke County troops in major battles.
SiGe HBT BiCMOS technology is the obvious groundbreaker of the Si heterostructures application space. To date virtually every major player in the communications electronics market either has SiGe up and running in-house or is using someone else’s SiGe fab as foundry for their designers. Key to this success lies in successful integration of the SiGe HBT and Si CMOS, with no loss of performance from either device. Filled with contributions from leading experts, Fabrication of SiGe HBT BiCMOS Technologies brings together a complete discussion of these topics into a single resource. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume examines the design, fabrication, and application of silicon heterostructure transistors. A novel aspect of this book the inclusion of numerous snapshot views of the industrial state-of-the-art for SiGe HBT BiCMOS technology. It has been carefully designed to provide a useful basis of comparison for the current status and future course of the global industry. In addition to the copious technical material and the numerous references contained in each chapter, the book includes easy-to-reference appendices on the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.
When you see a nicely presented set of data, the natural response is: “How did they do that; what tricks did they use; and how can I do that for myself?” Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually held close to the vest and rarely divulged. Shamefully ignored in the technical literature, measurement and modeling of high-speed semiconductor devices is a fine art. Robust measuring and modeling at the levels of performance found in modern SiGe devices requires extreme dexterity in the laboratory to obtain reliable data, and then a valid model to fit that data. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on measurement and modeling of high-speed silicon heterostructure devices. The chapter authors provide experience-based tricks-of-the-trade and the subtle nuances of measuring and modeling advanced devices, making this an important reference for the semiconductor industry. It includes easy-to-reference appendices covering topics such as the properties of silicon and germanium, the generalized Moll-Ross relations, the integral charge-control model, and sample SiGe HBT compact model parameters.
No matter how you slice it, semiconductor devices power the communications revolution. Skeptical? Imagine for a moment that you could flip a switch and instantly remove all the integrated circuits from planet Earth. A moment’s reflection would convince you that there is not a single field of human endeavor that would not come to a grinding halt, be it commerce, agriculture, education, medicine, or entertainment. Life, as we have come to expect it, would simply cease to exist. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume covers SiGe circuit applications in the real world. Edited by John D. Cressler, with contributions from leading experts in the field, this book presents a broad overview of the merits of SiGe for emerging communications systems. Coverage spans new techniques for improved LNA design, RF to millimeter-wave IC design, SiGe MMICs, SiGe Millimeter-Wave ICs, and wireless building blocks using SiGe HBTs. The book provides a glimpse into the future, as envisioned by industry leaders.
SiGe HBTs are the most mature of the Si heterostructure devices and not surprisingly the most completely researched and discussed in the technical literature. However, new effects and nuances of device operation are uncovered year-after-year as transistor scaling advances and application targets march steadily upward in frequency and sophistication. Providing a comprehensive treatment of SiGe HBTs, Silicon Heterostructure Devices covers an amazingly diverse set of topics, ranging from basic transistor physics to noise, radiation effects, reliability, and TCAD simulation. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this text explores SiGe heterojunction bipolar transistors (HBTs), heterostructure FETs, various other heterostructure devices, as well as optoelectronic components. The book provides an overview, characteristics, and derivative applications for each device covered. It discusses device physics, broadband noise, performance limits, reliability, engineered substrates, and self-assembling nanostructures. Coverage of optoelectronic devices includes Si/SiGe LEDs, near-infrared detectors, photonic transistors for integrated optoelectronics, and quantum cascade emitters. In addition to this substantial collection of material, the book concludes with a look at the ultimate limits of SiGe HBTs scaling. It contains easy-to-reference appendices on topics including the properties of silicon and germanium, the generalized Moll-Ross relations, and the integral charge-control model, and sample SiGe HBT compact model parameters.
This book brings to the forefront the realization that a successful police career involves not only surviving the danger involved in policing but also psychological survival. In this book, a mixed approach is employed that includes research and some practical suggestions from practitioners on how best to deal with the police health crisis. It is based on research associated with police mental health together with the subsequent effects on officers’ performance, physical health, and lifestyle. It begins by outlining the current challenges faced by police, including increased civil unrest, negative public reactions, and a biological siege brought about by the COVID-19 pandemic. Posttraumatic Stress Disorder and depression are reviewed and how these two conditions have been shown to promote negative health issues such as cardiovascular disease and gastrointestinal disorders, comorbid psychological conditions as well as suicide. Resilience is also discussed and its role in ameliorating stress. An overview of factors related to resilience is provided and some of the mechanisms that underpin resilience in police work are examined. Additionally, suggestions are made that may help police organizations foster resiliency in officers. The final chapter asks the question, “Where do we go from here?” The chapter discusses current legislation that will help police deal with the problem of psychological and physical health and suicide. Interventions discussed include the need for wellness programs, reducing stress through the police organization, peers support development, the use of mindfulness as a stress reduction strategy, PTSD mitigation, and reducing the fatigue health effects of shift work.
What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.
Modern is a word much used, but hard to pin down. In Inventing Modern, John H. Lienhard uses that word to capture the furious rush of newness in the first half of 20th-century America. An unexpected world emerges from under the more familiar Modern. Beyond the airplanes, radios, art deco, skyscrapers, Fritz Lang's Metropolis, Buck Rogers, the culture of the open road--Burma Shave, Kerouac, and White Castles--lie driving forces that set this account of Modern apart. One force, says Lienhard, was a new concept of boyhood--the risk-taking, hands-on savage inventor. Driven by an admiration of recklessness, America developed its technological empire with stunning speed. Bringing the airplane to fruition in so short a time, for example, were people such as Katherine Stinson, Lincoln Beachey, Amelia Earhart, and Charles Lindbergh. The rediscovery of mystery powerfully drove Modern as well. X-Rays, quantum mechanics, and relativity theory had followed electricity and radium. Here we read how, with reality seemingly altered, hope seemed limitless. Lienhard blends these forces with his childhood in the brave new world. The result is perceptive, engaging, and filled with surprise. Whether he talks about Alexander Calder (an engineer whose sculptures were exercises in materials science) or that wacky paean to flight, Flying Down to Rio, unexpected detail emerges from every tile of this large mosaic. Inventing Modern is a personal book that displays, rather than defines, an age that ended before most of us were born. It is an engineer's homage to a time before the bomb and our terrible loss of confidence--a time that might yet rise again out of its own postmodern ashes.
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