In recent years, there has been considerable interest in studying the quantum capacitance (QC) in 2D quantum MOSFETs (QMOSFET) and 1D Nano Wire FET (NWFET) devices of various technologically important materials which find extensive applications in many directions in low dimensional electronics. The 2D and 1D electron statistics in inversion layers of MOSFETs can rather easily be varied by changing the gate voltage which, in turn, brings a change of the surface electric field, the QC depends on the gate-voltage. This first-of-its-kind book deals solely with the QC in 2D MOSFETs of non-linear optical, ternary, quaternary, III-V compounds, II-VI, IV-VI, stressed Kane type, Ge, GaP, Bismuth telluride, Gallium Antimonide and their 1D NWFETs counter parts. The influence of quantizing magnetic field, crossed electric and magnetic fields, parallel magnetic field, have also been considered on the QC of the said devices of the aforementioned materials. The influences of strong light waves and ultra-strong electric field present in nano-devices have also been considered. The accumulation layers of the quantum effect devices of the said materials have also been discussed in detail by formulating the respective dispersion relations of the heavily doped compounds. The QC in 1D MOSFET of the said materials have also been investigated in this context on the basis of newly formulated electron energy spectra in all the cases. The QC in quantum well transistors and magneto quantum well transistors together with CNTFETs have been formulated and discussed in detail along with I-V equations of ballistic QWFETs and NWFETs together with their heavily doped counter parts under different external physical conditions. In this context, experimental determinations are suggested of the Einstein relation for the Diffusivity-Mobility ratio, the Debye screening length, Elastic Constants and the content of this book finds twenty-two different applications in the arena of nanoscience and nanotechnology.This book contains hundred open research problems which form the integral part of the text and are useful for both PhD aspirants and researchers.
This textbook for undergraduate students aims at providing an in-depth understanding of the relationship between diet, nutrients, health, diseases, and drug treatment. The book presents a comprehensive but detailed view of the field of Nutritional Biochemistry; balancing the historical with contemporary findings, the descriptive with the experimental, structure with function as well as the mechanistic and the clinical aspects of any particular nutrient. Though the major emphasis of the book is on Nutritional Biochemistry, the book also attempts to provide an insight into other related and relevant areas. Amongst the topics that are covered are: nutraceuticals, food, and nutrient interactions; the newly emerging field of the human microbiome, its interdependence on diet and human health as well as the public health concerns which is a looming burden of non-communicable diseases. Each chapter begins with an insight into the history of discovery and structure of the nutrient, its absorption, and metabolism, physiological functions, ending with diseases associated with nutrient deficiency/toxicity along with a clinical perspective. Apart from this, the book emphasizes the biochemical basis of physiological responses and correlates the same with symptoms identifying the pathophysiology. This textbook caters to students of undergraduate courses like Biochemistry, Biomedical Sciences, Biological Sciences, Life Sciences, Home Science; Nutrition and Dietetics, Clinical Nutrition and Dietetics, and Nursing.
India's nuclear program is often misunderstood as an inward-looking endeavor of secretive technocrats. In Ploughshares and Swords, Jayita Sarkar challenges this received wisdom, narrating a global story of India's nuclear program during its first forty years. The book foregrounds the program's civilian and military features by probing its close relationship with the space program. Through nuclear and space technologies, India's leaders served the technopolitical aims of economic modernity and the geopolitical goals of deterring adversaries. The politically savvy, transnationally connected scientists and engineers who steered the program obtained technologies, materials, and information through a variety of state and nonstate actors from Europe and North America, including both superpowers. They thus maneuvered around Cold War politics and the choke points of the nonproliferation regime. Hyperdiversification increased choices for the leaders of the nuclear program but reduced democratic accountability at home. The nuclear program became a consensus-enforcing device in the name of the nation. Ploughshares and Swords is a provocative new history with global implications. It shows how geopolitical and technopolitical visions influence decisions about the nation after decolonization. Thanks to generous funding from the Swiss National Science Foundation, the ebook editions of this book are available as Open Access volumes from Cornell Open (cornellpress.cornell.edu/cornell-open) and other repositories.
In recent years, there has been considerable interest in studying the quantum capacitance (QC) in 2D quantum MOSFETs (QMOSFET) and 1D Nano Wire FET (NWFET) devices of various technologically important materials which find extensive applications in many directions in low dimensional electronics. The 2D and 1D electron statistics in inversion layers of MOSFETs can rather easily be varied by changing the gate voltage which, in turn, brings a change of the surface electric field, the QC depends on the gate-voltage. This first-of-its-kind book deals solely with the QC in 2D MOSFETs of non-linear optical, ternary, quaternary, III-V compounds, II-VI, IV-VI, stressed Kane type, Ge, GaP, Bismuth telluride, Gallium Antimonide and their 1D NWFETs counter parts. The influence of quantizing magnetic field, crossed electric and magnetic fields, parallel magnetic field, have also been considered on the QC of the said devices of the aforementioned materials. The influences of strong light waves and ultra-strong electric field present in nano-devices have also been considered. The accumulation layers of the quantum effect devices of the said materials have also been discussed in detail by formulating the respective dispersion relations of the heavily doped compounds. The QC in 1D MOSFET of the said materials have also been investigated in this context on the basis of newly formulated electron energy spectra in all the cases. The QC in quantum well transistors and magneto quantum well transistors together with CNTFETs have been formulated and discussed in detail along with I-V equations of ballistic QWFETs and NWFETs together with their heavily doped counter parts under different external physical conditions. In this context, experimental determinations are suggested of the Einstein relation for the Diffusivity-Mobility ratio, the Debye screening length, Elastic Constants and the content of this book finds twenty-two different applications in the arena of nanoscience and nanotechnology.This book contains hundred open research problems which form the integral part of the text and are useful for both PhD aspirants and researchers.
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