J.M. Poate's Books

Surface Modification and Alloying

by Laser, Ion, and Electron Beams

By: J.M. Poate,G. Foti,D.C. Jacobson

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Surface Modification and Alloying

by Laser, Ion, and Electron Beams

By: J.M. Poate,G. Foti,D.C. Jacobson

This book is an outcome of the NATO institute on surface modification which was held in Trevi, 1981. Surface modification and alloying by ion, electron or laser beams is proving to be one of the most burgeoning areas of materials science. The field covers such diverse areas as integrated circuit processing to fabricating wear and corrosion resistant surfaces on mechanical components. The common scientific questions of interest are the microstructures by the different energy deposition techniques. and associated physical properties produced The chapters constitute a critical review of the various subjects covered at Trevi. Each chapter author took responsibility for the overall review and used contributions from the many papers presented at the meeting; each participant gave a presentation. The contributors are listed at the start of each chapter. We took this approach to get some order in a large and diverse field. We are indebted to all the contributors, in particular the chapter authors for working the many papers into coherent packages; to Jim Mayer for hosting a workshop of chapter authors at Cornell and to Ian Bubb who did a sterling job in working over some of the manuscripts. Our special thanks are due to the text processing center at Bell Labs who took on the task of assembling the book. In particular Karen Lieb and Beverly Heravi typed the whole manuscript and had the entire book phototypeset using the Bell Laboratories UNIXTM system.

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413

Publisher

Springer Science & Business Media

Published Date

ISBN 10

146133733X

ISBN 13

9781461337331

Nanometer CMOS ICs

From Basics to ASICs

By: Harry J.M. Veendrick

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Nanometer CMOS ICs

From Basics to ASICs

By: Harry J.M. Veendrick

This textbook provides a comprehensive, fully-updated introduction to the essentials of nanometer CMOS integrated circuits. It includes aspects of scaling to even beyond 12nm CMOS technologies and designs. It clearly describes the fundamental CMOS operating principles and presents substantial insight into the various aspects of design implementation and application. Coverage includes all associated disciplines of nanometer CMOS ICs, including physics, lithography, technology, design, memories, VLSI, power consumption, variability, reliability and signal integrity, testing, yield, failure analysis, packaging, scaling trends and road blocks. The text is based upon in-house Philips, NXP Semiconductors, Applied Materials, ASML, IMEC, ST-Ericsson, TSMC, etc., courseware, which, to date, has been completed by more than 4500 engineers working in a large variety of related disciplines: architecture, design, test, fabrication process, packaging, failure analysis and software.

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Page Count

639

Publisher

Springer

Published Date

ISBN 10

3319475975

ISBN 13

9783319475974

Surface Modification and Alloying

by Laser, Ion, and Electron Beams

By: J.M. Poate,G. Foti,D.C. Jacobson

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Surface Modification and Alloying

by Laser, Ion, and Electron Beams

By: J.M. Poate,G. Foti,D.C. Jacobson

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Page Count

413

Publisher

Springer Science & Business Media

Published Date

ISBN 10

146133733X

ISBN 13

9781461337331

New Trends in Ion Beam Processing of Materials and Beam Induced Nanometric Phenomena

By: Francesco Priolo

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New Trends in Ion Beam Processing of Materials and Beam Induced Nanometric Phenomena

By: Francesco Priolo

Part I of this book is dedicated to the proceedings of symposium I of the EMRS 1996 Spring Meeting. This Symposium on "New Trends in Ion Beam Processing of Materials" was held in Strasbourg (France) from the 4th to the 7th of June 1996. Ion- beam processing represents a particularly powerful tool to modify and synthesise materials such as semiconductors, metals, dielectrics, and ceramics, In particular, the continuous development of the semiconductor industry, with the consequent shrinkage of device dimensions, is placing severe constraints on ion-beam processing with demands for keV and meV energy beams, high doses, and unprecedented control over contamination, beam purity, and divergence. These requirements are posing new challenges to the ion-beam community, ranging from fundamental processes (such as defect generation, defect-defect interactions, phase transitions) to engineering (such as process control and novel equipment). The aim of this Symposium was to provide an international forum for the presentation and discussion of new work in the field of ion-beam processing. More than a hundred papers were presented by scientists from all over the world. particular emphasis was given to new trends in ion-beam processing of semiconductors and to the current challenges faced by microelectronic device manufacturing. The fields of transient- enhanced diffusion, gettering, optoelectronic applications, group IV hetero epitaxy, damage, annealing, and synthesis were treated in detail. The interaction between the semiconductor and other communities is important for the development of new concepts and presentations in the field of metals, insulators, and new techniques (such as plasma-immersion ion implantation) were extremely interesting. Part II is dedicated to the proceedings of symposium K. This symposium has focused on modifications of the structure and properties of materials which are induced by several kinds of irradiations: on the one hand high energy deposited in the electrons which relax their energy to the lattice (fs lasers, heavy ions in the GeV energy range, cluster beams in the MeV range) and on the other hand energy deposited directly on the lattice atoms (heavy ions and cluster beams in the keV energy range). The idea was to emphasize the link between the material modifications on a nanometric scale and the energy input on the fs time scale from both the experimental and theoretical point of view. To reach these goals our attention was focused on single event effects: single fs laser shots, single ion and cluster tracks (low and high energy).

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640

Publisher

Elsevier Science Serials

Published Date

ISBN 10

0444205063

ISBN 13

9780444205063

Pore Scale Phenomena

Frontiers in Energy and Environment

By: J. M. Poate,T. H. Illangasekare,Hossein Kazemi,R. J. Kee

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Pore Scale Phenomena

Frontiers in Energy and Environment

By: J. M. Poate,T. H. Illangasekare,Hossein Kazemi,R. J. Kee

The field of pore scale phenomena is now emerging as one of the frontiers of science and many engineering disciplines. Transport phenomena in the subsurface of the earth play key roles in the energy and environmental domains. For example, the shale gas and oil boom is revolutionizing the world's energy portfolio. Pore scale phenomena from the nanoscale to mesoscale dominate the extraction of these resources. Similarly in the environmental domain, pore storage and pore-scale physics affect the availability of water resources and protecting its quality. Water flow and vapor transport in the pores near the land surface is critical to understand soil water evaporation in the context of local and global hydrologic cycle affecting climate and climate change. Pore scale phenomena similarly play critical roles in the domain of materials science and biology. For example, many energy devices and membrane technologies are controlled by the physical and chemical properties of the pores. Identifying and analyzing the properties of these pores has emerged as a frontier of characterization science. This book provides, for the first time, a comprehensive overview of the fascinating interrelationship between engineering and science. The authors and contributors are recognized experts from the faculty of the Colorado School of Mines, Northwestern and Stanford. This book will appeal to earth and environmental scientists, materials scientists, physicists and chemists."--

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ISBN 10

1680158538

ISBN 13

9781680158533

Book's by J.M. Poate

Surface Modification and Alloying

Surface Modification and Alloying

Nanometer CMOS ICs

Nanometer CMOS ICs

Surface Modification and Alloying

Surface Modification and Alloying

New Trends in Ion Beam Processing of Materials and Beam Induced Nanometric Phenomena

New Trends in Ion Beam Processing of Materials and Beam Induced Nanometric Phenomena

Pore Scale Phenomena

Pore Scale Phenomena

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