The second half of the twentieth century and the beginning of the twenty ?rst have been characterized by the most impressive industrial revolution ever seen. In - proximately 40years, the complexity of integrated circuits (ICs) has increased by a 9 factor of 10 , with a corresponding reduction of the cost per bit by eight orders of magnitude. Not only has this evolution allowed dramatic progress in allscienti?c ?elds (large computers, space probes, etc.), but also has fueled the economic development with the raise of new markets (personal computers, cellular phones, etc.) and even social revolutions (world wide web, global village, etc.). In last years, however, the situation has signi?cantly changed: the continuous scaling down of device size has eventually brought the IC major technique, p- tolithography, to its limits. Overcoming its original limits has been proved to be possible, but the price to pay for that has changed the playing rules – while at the beginning of the IC history the evolution was driven by technology, now it is driven by economy, the cost of a medium size production plant being in the range of a few billion dollars.
The aim of this book is twofold: it is intended for use as a textbook for a ~ourse on electronic materials (indeed, it stems from a series of lectures on this topic delivered at Milan Polytechnic and at the universities of Modena and Parma), and as an up-to-date review for scientists working in the field ::>f silicon processing. Although a number of works on silicon are already available, the vast amount of existing and new data on silicon properties are nowhere adequately summarized in a single comprehensive report. The present volume is intended to fill this gap. Most of the examples dealt with are taken from the authors' every day experience, this choice being dictated merely by their greater knowl edge of these areas. Certain aspects of the physics of silicon have not been included; this is either because they have been treated in standard textbooks (e.g. the inhomogeneously doped semiconductor and the chem istry of isotropic or preferential aqueous etching of silicon), or because they are still in a rapidly evolving phase (e.g. silicon band-gap engineering, generation-recombination phenomena, cryogenic properties and the chem istry of plasma etching). In line with the standard practice in microelectronics, CGS units will be used for mechanical and thermal quantities, and SI units for electrical quan tities. All atomic energies will be given in electronvolts and the angstrom will be the unit of length used for atomic phenomena.
The second half of the twentieth century and the beginning of the twenty ?rst have been characterized by the most impressive industrial revolution ever seen. In - proximately 40years, the complexity of integrated circuits (ICs) has increased by a 9 factor of 10 , with a corresponding reduction of the cost per bit by eight orders of magnitude. Not only has this evolution allowed dramatic progress in allscienti?c ?elds (large computers, space probes, etc.), but also has fueled the economic development with the raise of new markets (personal computers, cellular phones, etc.) and even social revolutions (world wide web, global village, etc.). In last years, however, the situation has signi?cantly changed: the continuous scaling down of device size has eventually brought the IC major technique, p- tolithography, to its limits. Overcoming its original limits has been proved to be possible, but the price to pay for that has changed the playing rules – while at the beginning of the IC history the evolution was driven by technology, now it is driven by economy, the cost of a medium size production plant being in the range of a few billion dollars.
The aim of this book is twofold: it is intended for use as a textbook for a ~ourse on electronic materials (indeed, it stems from a series of lectures on this topic delivered at Milan Polytechnic and at the universities of Modena and Parma), and as an up-to-date review for scientists working in the field ::>f silicon processing. Although a number of works on silicon are already available, the vast amount of existing and new data on silicon properties are nowhere adequately summarized in a single comprehensive report. The present volume is intended to fill this gap. Most of the examples dealt with are taken from the authors' every day experience, this choice being dictated merely by their greater knowl edge of these areas. Certain aspects of the physics of silicon have not been included; this is either because they have been treated in standard textbooks (e.g. the inhomogeneously doped semiconductor and the chem istry of isotropic or preferential aqueous etching of silicon), or because they are still in a rapidly evolving phase (e.g. silicon band-gap engineering, generation-recombination phenomena, cryogenic properties and the chem istry of plasma etching). In line with the standard practice in microelectronics, CGS units will be used for mechanical and thermal quantities, and SI units for electrical quan tities. All atomic energies will be given in electronvolts and the angstrom will be the unit of length used for atomic phenomena.
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