E.I. Givargizov's Books

РОСТ КРИСТАЛЛОВ/Rost Kristallov/Growth of Crystals

Volume 9

By: N. N. Sheftal',E. I. Givargizov

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РОСТ КРИСТАЛЛОВ/Rost Kristallov/Growth of Crystals

Volume 9

By: N. N. Sheftal',E. I. Givargizov

For 50 years the Fedorov Institute of Crystallography, Mineralogy, and Petrography at Leningrad Mining Institute has held annual memorial meetings for E. S. Fedorov. Immediate ly after the jubilee meeting (May 21-24, 1969), the Fedorov All-Union Symposium on Crystal Growth was held, and the proceedings of that symposium constitute Volume 9 of Growth of Crystals. The symposium surveyed the advances made in the USSR in those aspects of growth con cerned mainly with morphology and structure in natural crystals or closely related artificial ones, work which confirmed their relation to E. S. Fedorov and to mineralogical crystallogra phy. Crystallography is one of the older branches of natural science but has recently under gone a striking rejuvenation on account of new methods and new concepts. Photogoniometric methods have been developed in goniometry, while crystal optics has found new lines of ad vance in electrooptics and techniques in the ultraviolet and far infrared regions. Morphologic studies now use a vast range of techniques, from the hand lens to the electron microscope or cinemicrography. X-ray analysis is steadily becoming more automatic, and fast computers are used with accelerated methods of structure interpretation. Crystal growth is one of the younger divisions of crystallography; previously t it had been of interest only in experimental mineralogy, but now it is an important branch of science and technology with close relations to industry.

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326

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Springer Science & Business Media

Published Date

ISBN 10

1468416898

ISBN 13

9781468416893

Oriented Crystallization on Amorphous Substrates

By: E.I. Givargizov

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Oriented Crystallization on Amorphous Substrates

By: E.I. Givargizov

Present-day scienceand technology have become increasingly based on studies and applications of thin films. This is especiallytrue of solid-state physics, semiconduc tor electronics, integrated optics, computer science, and the like. In these fields, it is necessary to use filmswith an ordered structure, especiallysingle-crystallinefilms, because physical phenomena and effects in such films are most reproducible. Also, active parts of semiconductor and other devices and circuits are created, as a rule, in single-crystal bodies. To date, single-crystallinefilms have been mainly epitaxial (or heteroepitaxial); i.e., they have been grown on a single-crystalline substrate, and principal trends, e.g., in the evolution of integrated circuits (lCs), have been based on continuing reduction in feature size and increase in the number of components per chip. However, as the size decreases into the submicrometer range, technological and physical limitations in integrated electronics become more and more severe. It is generally believed that a feature size of about 0.1um will have a crucial character. In other words, the present two-dimensional ICs are anticipated to reach their limit of minimization in the near future, and it is realized that further increase of packing density and/or functions might depend on three-dimensional integration. To solve the problem, techniques for preparation of single-crystalline films on arbitrary (including amorphous) substrates are essential.

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377

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Springer Science & Business Media

Published Date

ISBN 10

1489925600

ISBN 13

9781489925602

Oriented Crystallization on Amorphous Substrates

By: E.I. Givargizov

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Oriented Crystallization on Amorphous Substrates

By: E.I. Givargizov

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377

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Springer Science & Business Media

Published Date

ISBN 10

1489925600

ISBN 13

9781489925602

Growth of Crystals

By: E.I. Givargizov,S.A. Grinberg

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Growth of Crystals

By: E.I. Givargizov,S.A. Grinberg

This volume, as the previous ones, consists primarily of review artic1es. However, it also contains a large quantity of original material on the growth of crystals and films. Priority is given to experimental work. Only two artic1es are concerned exc1usively with the theory of crystal growth. Theoretical aspects are treated in several others. This volume is divided into three parts. Part I, "Epitaxy and Transformations in Thin Films," stems from the current broad application of lasers and optical effects in general to crystal growth (in particular, the growth of thin films). The first three artic1es of the book are devoted to this topic. In particular, the laser pulse vaporization method, for which a comparatively slow deposition rate is typical (which should not always be viewed as a drawback), is distinguished by the unique kinetics of the initial growth stages. These are not entirely explained. However, this method is completely suitable for oriented or generally ordered growth of films under otherwise equal conditions. Another artic1e of this section is based on use of ultrashort (down to picosecond) laser pulses. It emphasizes the nonequilibrium processes of crystallization and decrystallization that are characteristic for such influences. In particular, material heated above its melting point and metastable states in the semiconductor melt exhibit these qualities.

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232

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Springer

Published Date

ISBN 10

0306181177

ISBN 13

9780306181177

РОСТ КРИСТАЛЛОВ/Rost Kristallov/Growth of Crystals

By: N. N. Sheftal',E. I. Givargizov

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РОСТ КРИСТАЛЛОВ/Rost Kristallov/Growth of Crystals

By: N. N. Sheftal',E. I. Givargizov

Average ratings

N/A

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Solve jigsaw puzzle

Age

Page Count

329

Publisher

Springer

Published Date

ISBN 10

146841691X

ISBN 13

9781468416916

Book's by E.I. Givargizov

РОСТ КРИСТАЛЛОВ/Rost Kristallov/Growth of Crystals

РОСТ КРИСТАЛЛОВ/Rost Kristallov/Growth of Crystals

Oriented Crystallization on Amorphous Substrates

Oriented Crystallization on Amorphous Substrates

Oriented Crystallization on Amorphous Substrates

Oriented Crystallization on Amorphous Substrates

Growth of Crystals

Growth of Crystals

РОСТ КРИСТАЛЛОВ/Rost Kristallov/Growth of Crystals

РОСТ КРИСТАЛЛОВ/Rost Kristallov/Growth of Crystals

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