Title

Login

Join

Book's by Ahtisham Ul Haq Pampori

Covers

List

GaN Transistor Modeling for RF and Power Electronics

Using The ASM-HEMT Model

By: Yogesh Singh Chauhan,Ahtisham Ul Haq Pampori,Sheikh Aamir Ahsan

Write a review Read reviews Take a Quiz Solve Book Puzzle

GaN Transistor Modeling for RF and Power Electronics

Using The ASM-HEMT Model

By: Yogesh Singh Chauhan,Ahtisham Ul Haq Pampori,Sheikh Aamir Ahsan

GaN Transistor Modeling for RF and Power Electronics: Using The ASM-GaN-HEMT Model covers all aspects of characterization and modeling of GaN transistors for both RF and Power electronics applications. Chapters cover an in-depth analysis of the industry standard compact model ASM-HEMT for GaN transistors. The book details the core surface-potential calculations and a variety of real device effects, including trapping, self-heating, field plate effects, and more to replicate realistic device behavior. The authors also include chapters on step-by-step parameter extraction procedures for the ASM-HEMT model and benchmark test results. GaN is the fastest emerging technology for RF circuits as well as power electronics. This technology is going to grow at an exponential rate over the next decade. This book is envisioned to serve as an excellent reference for the emerging GaN technology, especially for circuit designers, materials science specialists, device engineers and academic researchers and students. - Provides an overview of the operation and physics of GaN-based transistors - Features in-depth description (by the developers of the model) of all aspects of the industry standard ASM-HEMT model for GaN circuits - Details parameter extraction of GaN devices and measurement data requirements for GaN model extraction

Average ratings

N/A

5

0%

4

0%

3

0%

2

0%

1

0%

Solve jigsaw puzzle

Age

Page Count

262

Publisher

Elsevier

Published Date

ISBN 10

0323999409

ISBN 13

9780323999403

GaN Transistor Modeling for RF and Power Electronics

Using The ASM-HEMT Model

By: Yogesh Singh Chauhan,Ahtisham Ul Haq Pampori,Sheikh Aamir Ahsan

Write a review Read reviews Take a Quiz Solve Book Puzzle

GaN Transistor Modeling for RF and Power Electronics

Using The ASM-HEMT Model

By: Yogesh Singh Chauhan,Ahtisham Ul Haq Pampori,Sheikh Aamir Ahsan

GaN Transistor Modeling for RF and Power Electronics: Using The ASM-GaN-HEMT Model covers all aspects of characterization and modeling of GaN transistors for both RF and Power electronics applications. Chapters cover an in-depth analysis of the industry standard compact model ASM-HEMT for GaN transistors. The book details the core surface-potential calculations and a variety of real device effects, including trapping, self-heating, field plate effects, and more to replicate realistic device behavior. The authors also include chapters on step-by-step parameter extraction procedures for the ASM-HEMT model and benchmark test results. GaN is the fastest emerging technology for RF circuits as well as power electronics. This technology is going to grow at an exponential rate over the next decade. This book is envisioned to serve as an excellent reference for the emerging GaN technology, especially for circuit designers, materials science specialists, device engineers and academic researchers and students. - Provides an overview of the operation and physics of GaN-based transistors - Features in-depth description (by the developers of the model) of all aspects of the industry standard ASM-HEMT model for GaN circuits - Details parameter extraction of GaN devices and measurement data requirements for GaN model extraction

Average ratings

N/A

5

0%

4

0%

3

0%

2

0%

1

0%

Solve jigsaw puzzle

Age

Page Count

262

Publisher

Elsevier

Published Date

ISBN 10

0323999409

ISBN 13

9780323999403